High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer

标题
High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 108, Issue 17, Pages 173301
出版商
AIP Publishing
发表日期
2016-04-26
DOI
10.1063/1.4947576

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