Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices

标题
Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices
作者
关键词
-
出版物
Nanomaterials
Volume 9, Issue 4, Pages 518
出版商
MDPI AG
发表日期
2019-04-03
DOI
10.3390/nano9040518

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