期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 66, 期 4, 页码 1760-1765出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2896313
关键词
Atomic layer deposition (ALD); oxygen defects; temperature stability; Zr-doped ZnO (ZrZnO) thin-film transistors (TFTs)
资金
- Natural Science Foundation of China [61774100]
- Shanghai Sailing Program [17YF1406300]
- National Key Basic Research Program of China [2015CB655005]
- Science and Technology Commission of Shanghai Municipality Program [17DZ2281700]
We developed a novel method to fabricate Zr-doped ZnO (ZrZnO) thin films via low-temperature atomic layer deposition technique. ZrZnO films were deposited by diethylzinc (DEZ)/tetrakiszirconium (TDMAZr)/H2O cycles instead of the traditional DEZ/H2O/TDMAZr/H2O cycles and applied in thin-film transistors (TFTs). It is found that ZrZnO-TFTs with a Zn-Zr-O: ZnO atomic ratio of 1: 49, i.e., ZrZnO (1: 49) exhibit excellent properties, such as a minimum subthreshold swing value of 0.37 V/dec, a maximum I-ON/I-OFF value of 2.4x 10(7), a largermobility of 12.38 cm(2)/V.s, and a smaller threshold voltage shift (Delta Vth) of 0.61 V under temperature stress from 25 degrees C to 105 degrees C, which are superior compared with TFTs with ZnO channel doped by ZrO2 layer. The stability of ZnO TFTs was improved greatly by Zr-Zn-O doping. Moreover, the field-effect mobility of ZrZnO-TFTs was rarely influenced. Temperature-stress test was carried out to build up the correlation model in terms of the defect structures, subgap states, and stability. These results could provide a new access to understand the device instability of ZrZnO TFTs.
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