High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate

GeSn resonant-cavity-enhanced photodetectors on silicon-on-insulator platforms

(2018) Bo-Jun Huang et al.   OPTICS LETTERS

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

(2018) Nils von den Driesch et al.   Advanced Science

Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700  nm

(2018) Hilal Cansizoglu et al.   Photonics Research

High-speed silicon modulators for the 2  μm wavelength band

(2018) Wei Cao et al.   Optica

GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

(2018) Daniela Stange et al.   ACS Photonics

Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes

(2017) Yang Gao et al.   Nature Photonics

Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth

(2017) Yuan Dong et al.   OPTICS EXPRESS

Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range

(2017) Wei Wang et al.   OPTICS EXPRESS

Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates

(2017) Yating Wan et al.   OPTICS EXPRESS

Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer

(2017) Yu-Hui Huang et al.   OPTICS LETTERS

High Speed Surface Illuminated Si Photodiode Using Microstructured Holes for Absorption Enhancements at 900–1000 nm Wavelength

(2017) Yang Gao et al.   ACS Photonics

13  μm submilliamp threshold quantum dot micro-lasers on Si

(2017) Yating Wan et al.   Optica

In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector

(2016) Wei Wang et al.   JOURNAL OF APPLIED PHYSICS

Electrically pumped continuous-wave III–V quantum dot lasers on silicon

(2016) Siming Chen et al.   Nature Photonics

Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection

(2016) Thach Pham et al.   OPTICS EXPRESS

III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors

(2016) Ruijun Wang et al.   OPTICS EXPRESS

Silicon Based GeSn p-i-n Photodetector for SWIR Detection

(2016) Hui Cong et al.   IEEE Photonics Journal

High-speed detection at two micrometres with monolithic silicon photodiodes

(2015) Jason J. Ackert et al.   Nature Photonics

Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique

(2015) Yuan Dong et al.   OPTICS EXPRESS

Growth and characterization of SiGeSn quantum well photodiodes

(2015) Inga A. Fischer et al.   OPTICS EXPRESS

GeSn p-i-n waveguide photodetectors on silicon substrates

(2014) Yu-Hsiang Peng et al.   APPLIED PHYSICS LETTERS

Wave-function engineering and absorption spectra in Si0.16Ge0.84/Ge0.94Sn0.06/Si0.16Ge0.84 strained on relaxed Si0.10Ge0.90 type I quantum well

(2014) N. Yahyaoui et al.   JOURNAL OF APPLIED PHYSICS

GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz

(2014) Michael Oehme et al.   OPTICS EXPRESS

GeSn/Ge multiquantum well photodetectors on Si substrates

(2014) M. Oehme et al.   OPTICS LETTERS

GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

(2013) H. H. Tseng et al.   APPLIED PHYSICS LETTERS

Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics

(2013) Robert Chen et al.   NANO LETTERS

Space-division multiplexing in optical fibres

(2013) D. J. Richardson et al.   Nature Photonics

The electronic and optical properties of Eu/Si-codoped anatase TiO2 photocatalyst

(2012) Yanming Lin et al.   APPLIED PHYSICS LETTERS

GeSn p-i-n detectors integrated on Si with up to 4% Sn

(2012) M. Oehme et al.   APPLIED PHYSICS LETTERS

Electronic band structure and effective mass parameters of Ge1-xSnx alloys

(2012) Kain Lu Low et al.   JOURNAL OF APPLIED PHYSICS

The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications

(2012) P. Moontragoon et al.   JOURNAL OF APPLIED PHYSICS

Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing

(2012) Robert Chen et al.   JOURNAL OF CRYSTAL GROWTH

Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

(2011) J. Werner et al.   APPLIED PHYSICS LETTERS

Science and technology challenges in XXIst century optical communications

(2011) E. Desurvire et al.   COMPTES RENDUS PHYSIQUE

GeSn p-i-n photodetector for all telecommunication bands detection

(2011) Shaojian Su et al.   OPTICS EXPRESS

Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

(2009) Jay Mathews et al.   APPLIED PHYSICS LETTERS

Germanium on Silicon for Near-Infrared Light Sensing

(2009) L. Colace et al.   IEEE Photonics Journal

Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

(2008) Shotaro Takeuchi et al.   APPLIED PHYSICS LETTERS