Silicon Based GeSn p-i-n Photodetector for SWIR Detection

We reported an investigation of GeSn-based p-i-n photodetectors (PDs) with a Ge0.92Sn0.08 active layer grown on n-type Si (100) substrate using molecular beam epitaxy (MBE). The GeSn photodetector achieved a wide spectrum detection whose cutoff wavelength can reach to 2.3 mu m. The PDs exhibited a high performance near 2.0 mu m with a responsivity of 93 mA/W and a dark current of 171 mu A under a reverse bias of 1 V at room temperature. This work represented a promising technology to develop Si-based short-wave infrared (SWIR) photodetectors.