Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage

出版年份 2018 全文链接

标题

作者

关键词

Dual anode metal, P-GaN, AlGaN, Schottky barrier diode, Reverse recovery time

出版物

Volume 90, Issue -, Pages 107-111

出版商

Elsevier BV

发表日期

2018-10-22

DOI

10.1016/j.mssp.2018.10.013

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