期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 90, 期 -, 页码 1-6出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2018.10.003
关键词
Graded band gap; SCAPS-1D; Perovskite solar cell; HTM-free
类别
资金
- Department of Education, Fujian Province of China [JAT170622, JAT170630]
- Fujian Provincial Department of Science and Technology of China [2015H0010]
- Natural Science Foundation of Fujian Province [2016J01752]
- National Natural Science Foundation of China [51402050]
Expensive gold electrode and hole transporting material (HTM) currently used in perovskite solar cells are the major economic constraints to the scaling-up of this promising technology. Designing high-efficiency perovskite solar cell with graded band-gap structure to replace HTM and with low-cost electrode is urgently needed for real cell production. In our work numerical simulation of perovskite solar cell with the configuration of FTO/ZnO/CH3NH3Pb(I1-xBrx)(3)/Carbon is performed using SCAPS-1D program. The band gap of CH3NH3Pb(I1-xBrx)(3) absorber is tuned in the range of 1.5 eV to 2.3 eV by variation of the Br doping content. Both the uniform band gap and graded band gap absorber were examined. Based upon the simulated results, a promising efficiency of 17.89% can be realized with a back grading profile that consists of a graded thickness of 50 nm as well as 1.9 eV band gap at back surface. This work will provide guidelines for further efficiency enhancement of low cost perovskite solar cells.
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