Integer quantum Hall effect in graphene channel with p-n junction at domain wall in a strained ferroelectric film

标题
Integer quantum Hall effect in graphene channel with p-n junction at domain wall in a strained ferroelectric film
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 125, Issue 8, Pages 082525
出版商
AIP Publishing
发表日期
2018-12-27
DOI
10.1063/1.5052546

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