Optoelectronic response of (111) oriented CeO2 films for UV photodetector

We report on the structural, optical and optoelectronic properties of CeO2 films grown by pulsed laser deposition for its possible use as optoelectronic switch device. (111) oriented highly uniform nano-structured CeO2 films of about 100 nm were grown on quartz substrate at different temperatures for optimization of growth parameters. A slight variation in the optical band gap was observed for average 60% optically transparent films deposited at different temperatures. Enhanced photo resistive effects were recorded for all the films excited by UV light (254 nm) of intensity 3.6 mW/cm(2). Optoelectronic parameters such as photo resistivity, responsivity, detectivity and dynamic responses were optimized for the CeO2 films grown at different temperatures.