标题
Oxygen-Vacancy Induced Resistive Switching Effect in Mn-Doped ZnO Memory Devices
作者
关键词
-
出版物
Physica Status Solidi-Rapid Research Letters
Volume -, Issue -, Pages -
出版商
Wiley
发表日期
2018-11-27
DOI
10.1002/pssr.201800453
参考文献
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