Article
Materials Science, Multidisciplinary
Young Woo Choi, Hyoung Joon Choi
Summary: The study reveals that the interband tunneling properties in lateral black phosphorus junctions are significantly influenced by the anisotropic pseudospin structure, with different tunneling behaviors observed for different junction directions. Junctions of band-gap inverted BP exhibit variations in tunneling effects based on junction direction, suggesting potential in developing high-performance devices.
Review
Engineering, Environmental
Yaopeng Wu, Wei Yuan, Ming Xu, Shigen Bai, Yu Chen, Zhenghua Tang, Chun Wang, Yang Yang, Xiaoqing Zhang, Yuhang Yuan, Mingyue Chen, Xing Zhang, Bin Liu, Lelun Jiang
Summary: This article briefly reviews the structures, properties, and fabrication processes of flexible supercapacitors based on two-dimensional black phosphorus. It highlights the design strategies and future challenges of BP-based FSCs.
CHEMICAL ENGINEERING JOURNAL
(2021)
Article
Chemistry, Physical
Guoshuai Du, Feng Ke, Wuxiao Han, Bin Chen, Qinglin Xia, Jun Kang, Yabin Chen
Summary: This study provides a detailed analysis on the structural metastability of black arsenic and identifies its existence conditions based on thermodynamic variables. The researchers also developed a thermal annealing strategy to control the thickness of black arsenic flakes.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Review
Chemistry, Physical
Mengke Wang, Jun Zhu, You Zi, Zheng-Guang Wu, Haiguo Hu, Zhongjian Xie, Ye Zhang, Lanping Hu, Weichun Huang
Summary: The review systematically summarizes the synthetic techniques and fundamental properties of functional 2D BP nanostructures, including surface-modified 2D BP nanostructures and mixed-dimensional 2D BP-based heterostructures. It highlights the recent progress of functional 2D BP nanostructures in the fields of energy storage and conversion, (opto) electronics, catalysis, sensors, nonlinear photonics, and biomedical applications. The challenges and future opportunities in these emerging areas are also discussed.
JOURNAL OF MATERIALS CHEMISTRY A
(2021)
Article
Chemistry, Multidisciplinary
Lei Zhang, Zhe-Ji Wang, Bo Ma, Xiang-Yang Li, Yu-Chi Dai, Guowen Hu, Yong Peng, Qiang Wang, Hao-Li Zhang
Summary: This study reports a covalent modification method for liquid-phase exfoliated BP nanosheets based on a rational analysis of the BP structure. The modification is achieved using carbene as the modifying agent, improving the solubility and stability of BP nanosheets. Detailed characterization and theoretical calculations reveal the reaction mechanism and chemical properties of the modified BP.
CHINESE CHEMICAL LETTERS
(2022)
Article
Chemistry, Multidisciplinary
J. S. Shaikh, N. S. Shaikh, S. Sabale, N. Parveen, S. P. Patil, Y. K. Mishra, P. Kanjanaboos, S. Praserthdam, C. D. Lokhande
Summary: This review discusses the potential of phosphorus as an advanced material for commercial realization of advanced supercapacitors, highlighting its excellent physical and electrochemical properties. Phosphorus-based electrodes are widely studied and applied due to their good electrical conductivity and abundance in nature.
MATERIALS TODAY CHEMISTRY
(2021)
Review
Physics, Multidisciplinary
Ruge Quhe, Lin Xu, Shiqi Liu, Chen Yang, Yangyang Wang, Hong Li, Jie Yang, Qiuhui Li, Bowen Shi, Ying Li, Yuanyuan Pan, Xiaotian Sun, Jingzhen Li, Mouyi Weng, Han Zhang, Ying Guo, Linqiang Xu, Hao Tang, Jichao Dong, Jinbo Yang, Zhiyong Zhang, Ming Lei, Feng Pan, Jing Lu
Summary: Two-dimensional semiconductors show promising electrostatics and carrier transportability, offering potential for scaling FETs' gate length down to the sub-10 nm region without compromising device performance. Many 2D FETs exhibit excellent performance for high performance and/or low power applications, extending Moore's law down to 1 to 2-nm gate length.
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS
(2021)
Article
Chemistry, Analytical
Maria A. Tapia, Rui Gusmao, Clara Perez-Rafols, Xavier Subirats, Nuria Serrano, Zdenek Sofer, Jose Manuel Diaz-Cruz
Summary: This study demonstrates that exposing BP-based working electrodes to normal ambient conditions can enhance the performance of voltammetric sensing applications, with oxidized BP-SPCE showing improved analytical performance. The results highlight the potential of preparing and using BP-based sensors in normal ambient settings, with promising applications under physiological conditions.
Article
Chemistry, Physical
Abdulaziz S. R. Bati, Purevlkham Myagmarsereejid, Marco Fronzi, Kaicai Fan, Porun Liu, Yu Lin Zhong, Paul L. Burn, Ian R. Gentle, Paul E. Shaw, Munkhbayar Batmunkh
Summary: This article reports a simple solution-based method for the preparation of single-atom nickel-doped BP nanosheets and their application in perovskite solar cells, which leads to improved performance. Perovskite films prepared with the Ni-BP passivation layer have reduced defect densities and improved charge-transfer properties.
Review
Chemistry, Physical
Junchuan Liang, Yi Hu, Kaiqiang Zhang, Yaoda Wang, Xinmei Song, Anyang Tao, Yuzhu Liu, Zhong Jin
Summary: Alloying black phosphorus with arsenic to create black arsenic-phosphorus materials yields outstanding optical, electrical, and photoelectric properties, with potential applications in infrared photodetectors and high-performance FETs.
Review
Physics, Multidisciplinary
Yangyang Wang, Shiqi Liu, Qiuhui Li, Ruge Quhe, Chen Yang, Ying Guo, Xiuying Zhang, Yuanyuan Pan, Jingzhen Li, Han Zhang, Lin Xu, Bowen Shi, Hao Tang, Ying Li, Jinbo Yang, Zhiyong Zhang, Lin Xiao, Feng Pan, Jing Lu
Summary: Over the past decade, two-dimensional semiconductors have attracted wide interest due to their extraordinary properties, with field-effect transistors being commonly used as the device geometry. Direct metal contact is often utilized in 2DSC FETs due to the lack of effective doping techniques. The presence of a Schottky barrier in the metal-2DSC junction significantly impacts the performance of most 2DSC FETs, emphasizing the importance of low SB contacts.
REPORTS ON PROGRESS IN PHYSICS
(2021)
Review
Chemistry, Inorganic & Nuclear
M. B. Tahir, Nisar Fatima, Urooj Fatima, M. Sagir
Summary: Research in the field of semiconductor photocatalysis plays a crucial role in addressing the global energy crisis. The recent discovery of 2D BP, or phosphorene, offers new hope for solving energy issues, while studies on the material's morphology and eco-friendly energy production through density functional theory provide a better understanding.
INORGANIC CHEMISTRY COMMUNICATIONS
(2021)
Article
Nanoscience & Nanotechnology
Kai Ge, Yue Zhang, Yi Zhao, Zhiheng Zhang, Shuang Wang, Jiayu Cao, Yongfang Yang, Shujuan Sun, Mingwang Pan, Lei Zhu
Summary: BP@MOF heterojunctions were synthesized by growing 2D MOF-Fe/Co nanoplatelets on the surface of exfoliated BP nanosheets, leading to high activity for water splitting.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Multidisciplinary
Huang Shen-Yang, Zhang Guo-Wei, Wang Fan-Jie, Lei Yu-Chen, Yan Hu-Gen
Summary: Black phosphorus as an emerging two-dimensional material with direct bandgap semiconductor characteristics and highly tunable physical properties has attracted significant research interest. This review primarily focuses on the optical properties of black phosphorus, including its anisotropic optical absorption, exciton binding energy, and external perturbation effects.
ACTA PHYSICA SINICA
(2021)
Review
Physics, Multidisciplinary
Zihan Wang, Yan Yang, Bin Hua, Qingqing Ji
Summary: Two-dimensional materials are promising for ultrascaling transistors due to their immune short-channel effects. Chemical approaches like chemical vapor deposition and metalorganic CVD have been established to synthesize nanostructures and heterostructures for ultrascaled transistors. This review summarizes recent developments on the precise synthesis and defect engineering of electronic nanostructures/heterostructures for transistor applications. It is demonstrated that ultrascaled 2D transistors can be achieved by finely tuning the growth-as-fabrication process, which could lead to new device physics. Additionally, synthetic electronics possess superior scaling capability and could facilitate the development of post-Moore nanoelectronics.
FRONTIERS OF PHYSICS
(2023)
Article
Multidisciplinary Sciences
Linran Fan, Xiaodong Yan, Han Wang, Lihong Wang
Summary: Optical chaotic system is a central research topic, and real-time spatial-temporal imaging allows for the revelation, monitoring, and control of its dynamics. This study introduces a new perspective to the study of nonrepeatable optical chaos, paving the way for fully understanding and utilizing chaotic systems.
Review
Chemistry, Multidisciplinary
Xiaodong Yan, Justin H. Qian, Vinod K. Sangwan, Mark C. Hersam
Summary: The increasing importance of artificial intelligence has led to the development of neuromorphic circuits that aim to replicate the energy-efficient information processing of the brain. This review provides a conceptual overview of memtransistors in the context of neuromorphic circuits and surveys recent progress in this field. The different materials systems and device architectures are classified based on their control and tunability of synaptic behavior, with a focus on nanomaterials and their unique properties. Strategies for wafer-scale integration and materials challenges for practical neuromorphic circuits are also discussed.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Jiangbin Wu, Yu Yao, Miao-Ling Lin, Malte Rosner, Zhonghao Du, Kenji Watanabe, Takashi Taniguchi, Ping-Heng Tan, Stephan Haas, Han Wang
Summary: In this work, the spin-phonon coupling (SPC) in monolayer chromium tribromide is investigated using Raman spectroscopy and first principle calculations. The experimental and numerical results show good agreement in terms of Curie temperature and phonon shifts. It is demonstrated how magnetic exchange interactions affect phonon vibrations, providing design fundamentals for 2D magnetic materials and related devices.
ADVANCED MATERIALS
(2022)
Review
Chemistry, Multidisciplinary
Jiahui Ma, Hefei Liu, Ning Yang, Jingyi Zou, Sen Lin, Yuhao Zhang, Xu Zhang, Jing Guo, Han Wang
Summary: Memory technologies and applications using emerging 2D materials have gained increasing attention in recent years. This article provides an overview of progress in 2D-material-based memory technologies and applications at the circuit level. It discusses the growth and fabrication methods, reviews integrated memory circuits, compares experimental implementations with theoretical estimations, summarizes in-memory computing applications, and identifies challenges and possible approaches for more reliable system-level fabrication.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Physical
Boyang Zhao, Md Shafkat Bin Hoque, Gwan Yeong Jung, Hongyan Mei, Shantanu Singh, Guodong Ren, Milena Milich, Qinai Zhao, Nan Wang, Huandong Chen, Shanyuan Niu, Sang-Jun Lee, Cheng-Tai Kuo, Jun-Sik Lee, John A. Tomko, Han Wang, Mikhail A. Kats, Rohan Mishra, Patrick E. Hopkins, Jayakanth Ravichandran
Summary: Low-dimensional materials, such as chain-like or layered structures, exhibit significant anisotropic electrical, optical, and thermal properties. BaTiS3 (BTS), a material with a chain-like structure, has been found to possess giant in-plane optical anisotropy and glass-like thermal conductivity. By characterizing BTS crystals with different orientations, it is revealed that BTS has strong optical and thermal anisotropy.
CHEMISTRY OF MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Yunwei Ma, Ming Xiao, Zhonghao Du, Lei Wang, Eric Carlson, Louis Guido, Han Wang, Lai Wang, Yi Luo, Yuhao Zhang
Summary: This study addresses the activation of buried p-GaN layers in emerging GaN devices. It is found that the breakdown E-field and leakage current of sidewall-activated p-GaN layer are determined by the edge area with the highest activation efficiency. The leakage mechanism follows the trap-assisted tunneling model. These findings provide critical information for the design and processing of advanced GaN devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Multidisciplinary
Jiangbin Wu, Nan Wang, Ya-Ru Xie, Hefei Liu, Xinghao Huang, Xin Cong, Hung-Yu Chen, Jiahui Ma, Fanxin Liu, Hangbo Zhao, Jun Zhang, Ping-Heng Tan, Han Wang
Summary: This research reports the extraordinary mechanical properties of the newly discovered inorganic double helical semiconductor tin indium phosphate, which has the lowest Young's modulus and large elastic and plastic bending strains. These results are of great significance for understanding the mechanical properties of the material and its potential applications in flexible electronics and nanomedicine.
Article
Chemistry, Multidisciplinary
Max R. Lien, Nan Wang, Jiangbin Wu, Alexander Soibel, Sarath D. Gunapala, Han Wang, Michelle L. Povinelli
Summary: This study demonstrates an absorption-boosting resonant metal-insulator-metal (MIM) metasurface grating integrated with a thin-film BP photodetector, which can simultaneously increase mid-wave infrared absorption and responsivity in the detector.
Review
Chemistry, Multidisciplinary
Hefei Liu, Yuan Qin, Hung-Yu Chen, Jiangbin Wu, Jiahui Ma, Zhonghao Du, Nan Wang, Jingyi Zou, Sen Lin, Xu Zhang, Yuhao Zhang, Han Wang
Summary: This paper reviews the progress of artificial neuronal devices based on emerging volatile switching materials, focusing on the demonstrated neuron models implemented in these devices and their utilization for computational and sensing applications. Furthermore, it discusses the inspirations from neuroscience and engineering methods to enhance the neuronal dynamics that are yet to be realized in artificial neuronal devices and networks towards achieving the full functionalities of biological neurons.
ADVANCED MATERIALS
(2023)
Review
Engineering, Electrical & Electronic
Yuhao Zhang, Florin Udrea, Han Wang
Summary: This review examines the use of multidimensional architectures in power electronics devices, exploring the performance limits and material advantages of different architectures. Multidimensional architectures can improve the performance of power electronics systems and enable advances in speed, efficiency, and form factor.
NATURE ELECTRONICS
(2022)
Article
Physics, Applied
John M. Cain, Xiaodong Yan, Stephanie E. Liu, Justin H. Qian, Thomas T. Zeng, Vinod K. Sangwan, Mark C. Hersam, Stanley S. Chou, Tzu-Ming Lu
Summary: Sulfur-deficient polycrystalline two-dimensional molybdenum disulfide memtransistors demonstrate gate-tunable memristive switching for new memory operations and neuromorphic computing paradigms. The influence of grain boundaries, sulfur vacancies, and surface interactions on defect-related kinetics that produces memristive switching is studied using current transient measurements. It is observed that adsorbed water molecules alter the resistive switching kinetics by suppressing the electronic trap-filling processes.
APPLIED PHYSICS LETTERS
(2023)
Article
Multidisciplinary Sciences
Mingyi Rao, Hao Tang, Jiangbin Wu, Wenhao Song, Max Zhang, Wenbo Yin, Ye Zhuo, Fatemeh Kiani, Benjamin Chen, Xiangqi Jiang, Hefei Liu, Hung-Yu Chen, Rivu Midya, Fan Ye, Hao Jiang, Zhongrui Wang, Mingche Wu, Miao Hu, Han Wang, Qiangfei Xia, Ning Ge, Ju Li, J. Joshua Yang
Summary: Neural networks based on memristive devices have the potential to improve throughput and energy efficiency in machine learning and artificial intelligence, especially in edge applications. To commercialize edge applications, it is practical to download synaptic weights from cloud training and program them into memristors. High-precision programmability is required for memristors in neural network applications to ensure uniform and accurate performance across multiple networks.
Article
Engineering, Electrical & Electronic
Yuan Qin, Ming Xiao, Matthew Porter, Yunwei Ma, Joseph Spencer, Zhonghao Du, Alan G. Jacobs, Kohei Sasaki, Han Wang, Marko Tadjer, Yuhao Zhang
Summary: This study presents a lateral Ga2O3 Schottky barrier diode (SBD) with a record-breaking breakdown voltage (BV) of over 10 kV. The 10 kV SBD exhibits excellent thermal stability up to 200 degrees C, making it one of the highest operational temperatures achieved for Ga2O3 devices at multi-kilovolt levels. The key to achieving such high BV lies in the reduced surface field (RESURF) structure based on p-type nickel oxide (NiO), which effectively balances the depletion charges in the n-Ga2O3 channel at high voltage.
IEEE ELECTRON DEVICE LETTERS
(2023)
Review
Engineering, Electrical & Electronic
Mengjiao Li, Hefei Liu, Ruoyu Zhao, Feng-Shou Yang, Mingrui Chen, Ye Zhuo, Chongwu Zhou, Han Wang, Yen-Fu Lin, J. Joshua Yang
Summary: This review examines the switching mechanisms in memristive devices based on van der Waals materials, highlighting their potential advantages and the challenges that must be addressed for their use in next-generation electronic and computing applications. The modulation of structural defects or compositional impurities, also known as imperfections, mainly drives the memristive switching processes in these devices. The study explores how imperfections in van der Waals materials create different switching mechanisms, allowing for opportunities to engineer the switching behavior in memristive devices. The challenges of material selection, mechanism investigation, and switching uniformity control are discussed, along with the potential application of van der Waals memristors in efficient computing technologies at the system level.
NATURE ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Xiaodong Yan, Justin H. Qian, Jiahui Ma, Aoyang Zhang, Stephanie E. Liu, Matthew P. Bland, Kevin J. Liu, Xuechun Wang, Vinod K. Sangwan, Han Wang, Mark C. Hersam
Summary: This study presents a reconfigurable mixed-kernel transistor based on dual-gated van der Waals heterojunctions for low-power off-grid medical data classification and diagnosis applications. The experimental results show that this transistor can generate fully tunable Gaussian and sigmoid functions for arrhythmia detection from electrocardiogram signals with high classification accuracy. Additionally, the reconfigurable nature of this transistor allows for personalized detection. Compared to conventional complementary metal-oxide-semiconductor circuits, a single mixed-kernel heterojunction transistor provides a low-power approach for support vector machine classification applications.
NATURE ELECTRONICS
(2023)