Stacking fault reduction during annealing in Cu-poor CuInSe2 thin film solar cell absorbers analyzed by in situ XRD and grain growth modeling

标题
Stacking fault reduction during annealing in Cu-poor CuInSe2 thin film solar cell absorbers analyzed by in situ XRD and grain growth modeling
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 125, Issue 3, Pages 035303
出版商
AIP Publishing
发表日期
2019-01-19
DOI
10.1063/1.5052245

向作者/读者发起求助以获取更多资源

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search