NONVOLATILE FULL ADDER BASED ON A SINGLE MULTIVALUED HALL JUNCTION

Extraordinary hall balance

(2013) S. L. Zhang et al.   Scientific Reports

A High-Reliability, Low-Power Magnetic Full Adder

(2011) Yi Gang et al.   IEEE TRANSACTIONS ON MAGNETICS

Magnetic Tunnel Junction-Based Spintronic Logic Units Operated by Spin Transfer Torque

(2011) Xiaofeng Yao et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Two-bit-per-dot patterned media combining in-plane and perpendicular-to-plane magnetized thin films

(2011) J. Moritz et al.   JOURNAL OF APPLIED PHYSICS

Sixteen-state magnetic memory based on the extraordinary Hall effect

(2011) A. Segal et al.   JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

Integrated logic circuits using single-atom transistors

(2011) J. A. Mol et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Large enhancement of the anomalous Hall effect in Co/Pt multilayers sandwiched by MgO layers

(2010) S. L. Zhang et al.   APPLIED PHYSICS LETTERS

Anomalous Hall effect

(2010) Naoto Nagaosa et al.   REVIEWS OF MODERN PHYSICS

Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

(2009) Taehee Yoo et al.   APPLIED PHYSICS LETTERS

Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

(2008) Shoun Matsunaga et al.   Applied Physics Express

Three-valued magnetic tunnel junction for nonvolatile ternary content addressable memory application

(2008) Tetsuya Uemura et al.   JOURNAL OF APPLIED PHYSICS