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Quantum anomalous Hall effect

期刊

NATIONAL SCIENCE REVIEW
卷 1, 期 1, 页码 38-48

出版社

OXFORD UNIV PRESS
DOI: 10.1093/nsr/nwt029

关键词

topological insulator; quantum anomalous Hall effect; quantum Hall effect; ferromagnetic insulator; molecular beam epitaxy

资金

  1. National Natural Science Foundation of China
  2. National Basic Research Program of China
  3. Knowledge Innovation Program of Chinese Academy of Sciences

向作者/读者索取更多资源

Hall effect is a well-known electromagnetic phenomenon that has been widely applied in the semiconductor industry. The quantum Hall effect discovered in two-dimensional electronic systems under a strong magnetic field provided new insights into condensed matter physics, especially the topological aspect of electronic states. The quantum anomalous Hall effect is a special kind of the quantum Hall effect that occurs without a magnetic field. It has long been sought after because its realization will significantly facilitate the studies and applications of the quantum Hall physics. In this paper, we review how the idea of the quantum anomalous Hall effect was developed and how the effect was finally experimentally realized in thin films of a magnetically doped topological insulator.

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