Channel Composition Effect on the Bias-Illumination-Stress Stability of Solution-Processed Transparent Oxide Thin-Film Transistors Using Amorphous Aluminum-Indium-Zinc-Oxide Channel Layers

标题
Channel Composition Effect on the Bias-Illumination-Stress Stability of Solution-Processed Transparent Oxide Thin-Film Transistors Using Amorphous Aluminum-Indium-Zinc-Oxide Channel Layers
作者
关键词
-
出版物
ECS Journal of Solid State Science and Technology
Volume 3, Issue 9, Pages Q3005-Q3011
出版商
The Electrochemical Society
发表日期
2014-05-24
DOI
10.1149/2.002409jss

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