期刊
AIP ADVANCES
卷 4, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4898150
关键词
-
资金
- National Science Council Taiwan [103-2221-E-003-023, 102-2221-E-003-030-MY3, 102-2622-E-002-014]
Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (g(d)) shows only 16% enhancement with large V-DS (similar to-1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (-0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据