Uniform bipolar resistive switching properties with self-compliance effect of Pt/TiO2/p-Si devices

Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots

(2013) Jung Ho Yoon et al.   ADVANCED MATERIALS

Control of conducting filaments in TiO2 films by a thin interfacial conducting oxide layer at the cathode

(2013) Seong Keun Kim et al.   APPLIED PHYSICS LETTERS

Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology

(2013) Xiaoyi Yang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Current self-complianced and self-rectifying resistive switching in Ag-electroded single Na-doped ZnO nanowires

(2013) Jing Qi et al.   Nanoscale

Bipolar one diode–one resistor integration for high-density resistive memory applications

(2013) Yingtao Li et al.   Nanoscale

Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films

(2012) Myung Soo Lee et al.   APPLIED PHYSICS LETTERS

Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices

(2012) Wei Hu et al.   APPLIED PHYSICS LETTERS

Opportunity of Spinel Ferrite Materials in Nonvolatile Memory Device Applications Based on Their Resistive Switching Performances

(2012) Wei Hu et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Colossal resistive switching behavior and its physical mechanism of Pt/p-NiO/n-Mg0.6Zn0.4O/Pt thin films

(2011) Xinman Chen et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Changes to the Editorial Board

(2011) John D. Cressler   IEEE TRANSACTIONS ON ELECTRON DEVICES

A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

TiO2—a prototypical memristive material

(2011) K Szot et al.   NANOTECHNOLOGY

In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

(2010) H.J. Wan et al.   IEEE ELECTRON DEVICE LETTERS

On the RF Properties of Weakly Saturated SiGe HBTs and Their Potential Use in Ultralow-Voltage Circuits

(2010) Sachin Seth et al.   IEEE ELECTRON DEVICE LETTERS

ZnO as a buffer layer for growth of BiFeO3 thin films

(2010) Jiagang Wu et al.   JOURNAL OF APPLIED PHYSICS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Colossal resistance switching effect in Pt/spinel-MgZnO/Pt devices for nonvolatile memory applications

(2009) Xinman Chen et al.   APPLIED PHYSICS LETTERS

Resistance switching behaviors of V-doped La0.67Ca0.33MnO3 thin films on F-doped SnO2 conducting glass

(2009) Ting Zhang et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today