Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate

(2016) Lin Shang et al.   JOURNAL OF CRYSTAL GROWTH

A partly-contacted epitaxial lateral overgrowth method applied to GaN material

(2016) Ming Xiao et al.   Scientific Reports

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

(2016) Shuo-Wei Chen et al.   AIP Advances

The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodes

(2016) Tae Hoon Seo et al.   Scientific Reports

Study on the morphology and shape control of volcano-shaped patterned sapphire substrates fabricated by imprinting and wet etching

(2015) S. X. Jiang et al.   CRYSTENGCOMM

Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition

(2015) Xiao-Hang Li et al.   JOURNAL OF CRYSTAL GROWTH

Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer

(2015) C.H. Chiu et al.   JOURNAL OF CRYSTAL GROWTH

Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

(2015) S. Zhao et al.   Scientific Reports

Improved light output power of LEDs with embedded air voids structure and SiO2 current blocking layer

(2014) Shengjun Zhou et al.   APPLIED SURFACE SCIENCE

Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation Layer

(2014)   IEEE TRANSACTIONS ON ELECTRON DEVICES

Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

(2014) J Brault et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

(2014) Chia-Yu Lee et al.   Nanoscale Research Letters

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

(2011) Kazuhito Ban et al.   Applied Physics Express

Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

(2011) Zhiqiang Liu et al.   APPLIED PHYSICS LETTERS

GaN-Based Light-Emitting Diode With Sputtered AlN Nucleation Layer

(2011) Cheng-Hsiung Yen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Ligand-Passivated Eu:Y2O3Nanocrystals as a Phosphor for White Light Emitting Diodes

(2011) Qilin Dai et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

High-efficiency InGaN-based LEDs grown on patterned sapphire substrates

(2011) Xiao-Hui Huang et al.   OPTICS EXPRESS

Advances in group III-nitride-based deep UV light-emitting diode technology

(2010) M Kneissl et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Study on sapphire removal for thin-film LEDs fabrication using CMP and dry etching

(2009) Shengjun Zhou et al.   APPLIED SURFACE SCIENCE

Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire

(2009) M.J. Kappers et al.   JOURNAL OF CRYSTAL GROWTH

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

(2009) Hideki Hirayama et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

(2008) Haiyong Gao et al.   JOURNAL OF APPLIED PHYSICS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics