Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application

标题
Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application
作者
关键词
-
出版物
Scientific Reports
Volume 6, Issue 1, Pages -
出版商
Springer Nature
发表日期
2016-05-31
DOI
10.1038/srep26763

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