Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

标题
Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration
作者
关键词
-
出版物
Scientific Reports
Volume 6, Issue 1, Pages -
出版商
Springer Nature
发表日期
2016-05-11
DOI
10.1038/srep25674

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