Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions
出版年份 2014 全文链接
标题
Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions
作者
关键词
-
出版物
Scientific Reports
Volume 4, Issue 1, Pages -
出版商
Springer Nature
发表日期
2014-08-11
DOI
10.1038/srep05951
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
- (2013) Simone Bertolazzi et al. ACS Nano
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
- (2013) Woo Jong Yu et al. Nature Nanotechnology
- Reply to 'Measurement of mobility in dual-gated MoS2 transistors'
- (2013) B. Radisavljevic et al. Nature Nanotechnology
- Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
- (2013) Kallol Roy et al. Nature Nanotechnology
- Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
- (2013) Min Sup Choi et al. Nature Communications
- Integrated Circuits Based on Bilayer MoS2 Transistors
- (2012) Han Wang et al. NANO LETTERS
- Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
- (2012) Jiang Pu et al. NANO LETTERS
- Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
- (2012) Keng-Ku Liu et al. NANO LETTERS
- Single-layer graphene sound-emitting devices: experiments and modeling
- (2012) He Tian et al. Nanoscale
- A novel flexible capacitive touch pad based on graphene oxide film
- (2012) He Tian et al. Nanoscale
- Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
- (2012) Woo Jong Yu et al. NATURE MATERIALS
- Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
- (2012) S. J. Haigh et al. NATURE MATERIALS
- Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
- (2012) Thanasis Georgiou et al. Nature Nanotechnology
- Phonon-limited mobility inn-type single-layer MoS2from first principles
- (2012) Kristen Kaasbjerg et al. PHYSICAL REVIEW B
- Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
- (2012) L. Britnell et al. SCIENCE
- Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
- (2012) H. Yang et al. SCIENCE
- Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
- (2011) Subhamoy Ghatak et al. ACS Nano
- Single-Layer MoS2 Phototransistors
- (2011) Zongyou Yin et al. ACS Nano
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Dielectric Screening Enhanced Performance in Graphene FET
- (2009) Fang Chen et al. NANO LETTERS
- Direct observation of a widely tunable bandgap in bilayer graphene
- (2009) Yuanbo Zhang et al. NATURE
- Epitaxial Graphene Transistors on SiC Substrates
- (2008) Jakub Kedzierski et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Superior Thermal Conductivity of Single-Layer Graphene
- (2008) Alexander A. Balandin et al. NANO LETTERS
- Intrinsic and extrinsic performance limits of graphene devices on SiO2
- (2008) Jian-Hao Chen et al. Nature Nanotechnology
- Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors
- (2008) Xinran Wang et al. PHYSICAL REVIEW LETTERS
- Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
- (2008) X. Li et al. SCIENCE
- Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
- (2008) C. Lee et al. SCIENCE
- Ultrahigh electron mobility in suspended graphene
- (2008) K.I. Bolotin et al. SOLID STATE COMMUNICATIONS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExplorePublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More