High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen
出版年份 2014 全文链接
标题
High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen
作者
关键词
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出版物
Scientific Reports
Volume 4, Issue 1, Pages -
出版商
Springer Nature
发表日期
2014-04-02
DOI
10.1038/srep04558
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