期刊
NANO LETTERS
卷 11, 期 9, 页码 3624-3628出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl201430a
关键词
Graphene; bilayer; SiC; quantum Hall; Bernal stacking
类别
资金
- NRI
- DARPA
- NSF [DMR-0819860, DMR-0654118]
- NINE
- State of Florida
- DOE
- LDRD
- US DOE's National Nuclear Security Administration [DE-AC04-94AL85000]
- US DOE Office of Basic Energy Sciences, Division of Materials Science and Engineering
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [819860] Funding Source: National Science Foundation
We investigate the magnetotransport properties of quasi-free-standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H-2 intercalation. At the charge neutrality point, the longitudinal resistance shows an insulating behavior, which follows a temperature dependence consistent with variable range hopping transport in a gapped state. In a perpendicular magnetic field, we observe quantum Hall states (QHSs) both at filling factors (v) multiples of four (v = 4, 8, 12), as well as broken valley symmetry QHSs at v = 0 and v = 6. These results unambiguously show that the quasi-free-standing graphene bilayer grown on the Si-face of SiC exhibits Bernal stacking.
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