Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

In situ observation of two-step growth of AlN on sapphire using high-temperature metal–organic chemical vapour deposition

(2013) Xiaojuan Sun et al.   CRYSTENGCOMM

Surface diffusion and layer morphology of ((112¯2)) GaN grown by metal-organic vapor phase epitaxy

(2012) Simon Ploch et al.   JOURNAL OF APPLIED PHYSICS

Influence of GaCl carrier gas flow rate on properties of GaN films grown by hydride vapor-phase epitaxy

(2011) Yongliang Shao et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth

(2011) Lei Zhang et al.   JOURNAL OF CRYSTAL GROWTH

Advances in Bulk Crystal Growth of AlN and GaN

(2011) Dirk Ehrentraut et al.   MRS BULLETIN

Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

(2011) Daniel F. Feezell et al.   MRS BULLETIN

Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H–SiC substrate by MOVPE

(2010) Shuang Qu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Effect of stress on self-diffusion in bcc Fe: An atomistic simulation study

(2010) Je-Wook Jang et al.   SCRIPTA MATERIALIA

Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth

(2009) Liverios Lymperakis et al.   PHYSICAL REVIEW B