Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth

Growth evolution of SixNy on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality

(2014) Tzu Yu Wang et al.   CRYSTENGCOMM

Achieve 2-inch-diameter homogeneous GaN films on sapphire substrates by pulsed laser deposition

(2014) Wenliang Wang et al.   JOURNAL OF MATERIALS SCIENCE

A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers

(2014) Wenliang Wang et al.   Journal of Materials Chemistry C

Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate

(2013) Junlin Liu et al.   CRYSTENGCOMM

Analysis of Dislocations Generated during Metal–Organic Vapor Phase Epitaxy of GaN on Patterned Templates

(2013) Sami Suihkonen et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Prospects of III-nitride optoelectronics grown on Si

(2013) D Zhu et al.   REPORTS ON PROGRESS IN PHYSICS

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

(2013) Wenliang Wang et al.   Journal of Materials Chemistry C

Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

(2012) S. Fritze et al.   JOURNAL OF APPLIED PHYSICS

InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers

(2012) Adam H. Blake et al.   JOURNAL OF APPLIED PHYSICS

Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers

(2012) Jun Ma et al.   JOURNAL OF CRYSTAL GROWTH

Radiation effects in GaN materials and devices

(2012) Alexander Y. Polyakov et al.   Journal of Materials Chemistry C

Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

(2011) Dandan Zhu et al.   JOURNAL OF APPLIED PHYSICS

Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper

(2011) Kei May Lau et al.   OPTICS EXPRESS

High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition

(2010) R.F. Xiang et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Strain controlled growth of crack-free GaN with low defect density on silicon (111) substrate

(2010) P. Drechsel et al.   JOURNAL OF CRYSTAL GROWTH

Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%

(2010) JaeWon Lee et al.   JOURNAL OF CRYSTAL GROWTH

High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD

(2010) Takashi Egawa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates

(2010) Yi-Jung Liu et al.   OPTICS EXPRESS

MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer

(2009) William E. Fenwick et al.   JOURNAL OF CRYSTAL GROWTH

Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD

(2008) Engin Arslan et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD

(2008) Weijun Luo et al.   MICROELECTRONICS JOURNAL