期刊
ULTRAMICROSCOPY
卷 134, 期 -, 页码 55-61出版社
ELSEVIER
DOI: 10.1016/j.ultramic.2013.07.005
关键词
Multi-junction solar cell; Wafer bonding; Interfaces; Aberration corrected STEM/EELS
类别
Aberration corrected scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) investigations have been applied to investigate the structure and composition fluctuations near interfaces in wafer bonded multi junction solar cells. Multi junction solar cells are of particular interest since efficiencies well above 40% have been obtained for concentrator solar cells which are based on III-V compound semiconductors. In this methodologically oriented investigation, we explore the potential of combining aberration corrected high angle annular dark held STEM imaging (HAADF-STEM) with spectroscopic techniques, such as EELS and energy dispersive X-ray spectroscopy (EDXS), and with high resolution transmission electron microscopy (HR-TEM), in order to analyze the effects of fast atom beam (FAB) and ion beam bombardment (IB) activation treatments on the structure and composition of bonding interfaces of wafer bonded solar cells on Si substrates. Investigations using STEM/EELS are able to measure quantitatively and with high precision the vvidths and the fluctuations in element distributions within amorphous interface layers of nanometer extensions, including those of light elements. Such measurements allow the control of the activation treatments and thus support assessing electrical conductivity phenomena connected with impurity and dopant distributions near interfaces for optimized performance of the solar cells. (C) 2013 Elsevier B.V. All tights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据