期刊
THIN SOLID FILMS
卷 563, 期 -, 页码 15-19出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2014.05.011
关键词
CBRAM; Conductive bridge random access memory; Antinomy; Doping; Data retention; Compliance; Resistive memory
In this paper we present the impact of Sb doping of the GeS2 electrolyte in W/GeS2/Ag based conductive bridge random access memory (CBRAM) on the memory performance. In particular, the CBRAM resistance window, R-ON and R-OFF values versus programming current, power consumption and reliability are analyzed in depth. We demonstrated that the Sb concentration governs the optimal operating conditions. In particular, high Sb doping allows low programming current operation (suitable for low power applications), while low Sb content improves the R-OFF/R-ON ratio (needed in particular for nonvolatile field-programmable gate array applications). Finally, we observed that the high temperature retention could be improved by increasing the Sb doping. This result was interpreted by means of ab initio calculations, indicating that Sb reduces the dissolution rate of the Ag-based conductive filament in the electrolyte. (C) 2014 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据