☆ 4.4 Article Proceedings Paper

Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells

THIN SOLID FILMS (2013)

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期刊

THIN SOLID FILMS
卷 544, 期 -, 页码 93-98

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2013.04.111

关键词

Si nanoparticle; Quantum-dot sensitized solar cell; Multiple exciton generation

类别

Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter

资金

  1. New Energy and Industrial Technology Development Organization (NEDO)
  2. Grants-in-Aid for Scientific Research [24740371] Funding Source: KAKEN

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We have studied photocurrent generation in Si quantum-dot (QD) sensitized solar cells, where QD thin films composed of Si nanoparticles were deposited using the double multi-hollow discharge plasma chemical vapor deposition process in an SiH4/H-2 and CH4 or N-2 gas mixture. The short-circuit current density of the Si QD sensitized solar cells increases by a factor of 2.5 by using Si nanoparticles prepared by irradiation of CH4 or N-2 plasma onto the Si nanoparticle surface. We have measured incident photon-to-current conversion efficiency (IPCE) in the near-ultraviolet range using quartz-glass front panels of the QD sensitized solar cells. With decreasing the wavelength of irradiation light, IPCE gradually increases upon light irradiation in a wavelength range less than about 600 nm, and then steeply increases below 300 nm, corresponding to 2.2 times the optical band-gap energy of Si QD film. (C) 2013 Elsevier B.V. All rights reserved.

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