Fabrication of bridged-grain polycrystalline silicon thin film transistors by nanoimprint lithography

Bridged-grain polycrystalline silicon thin film transistors were fabricated containing twelve submicron sized doped conductive regions formed along the channel. These regions were formed using a grating-shaped implantation mask, patterned using an ultraviolet curable nanoimprint lithography technique. The resulting devices have increased on-state current, low leakage current and good uniformity. (C) 2013 Elsevier B. V. All rights reserved.