期刊
THIN SOLID FILMS
卷 520, 期 18, 页码 5997-6000出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.05.026
关键词
Zinc oxide; Heterojunction; Electronic transport; Thin films
类别
资金
- Mid-career Researcher Program through the National Research Foundation of Korea (NRF)
- Korean government (MEST) [2011-0018033]
- Korea Institute of Science and Technology Program
- National Research Foundation of Korea [2010-0014498] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Heterojunction diodes of n-type ZnO were fabricated on a p-type Si(100) substrate using an ultra-high vacuum radio frequency magnetron sputtering method at room temperature. A short-time post-annealing process was performed to prevent inter-diffusion of Zn, dopants, and Si atoms. The post-annealing process at 600 degrees C enhanced the crystallinity of ZnO films and produced a high forward to reverse current ratio of the heterojunction diode with a barrier height of approximately 0.336 eV. A thin SiOx layer at the interface of the ZnO film and Si substrate appeared distinctly at the 600 degrees C annealing, however the post-annealing at 700 degrees C showed an a-(Zn2xSi1-xO2) structure caused by diffusion of silicon into the ZnO film. In the n-ZnO/p-Si sample annealed at 700 degrees C, a rapid change in the barrier height was considered due to the effect of the dopant segregation from the substrate and deformation of the a-SiOx structure. (C) 2012 Elsevier B.V. All rights reserved.
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