4.4 Article Proceedings Paper

Characterization of Cu(InGa)Se2 grain boundary properties by electron- and tip-probe methods

期刊

THIN SOLID FILMS
卷 519, 期 21, 页码 7347-7350

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ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.12.223

关键词

Cu(InGa)Se-2; Grain boundary; EBIC; EBSD; SSRM; TEM

资金

  1. New Energy and Industrial Technology Development Organization (NEDO)

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Grain boundary (GB) properties of Cu(InGa)Se-2 thin film were measured using electron beam induced current (EBIC), electron back scatter diffraction patterns (EBSD) and scanning spreading resistance microscopy (SSRM) methods. The weak EBIC signal was observed in back-side grains which were separated by the random grain boundaries (GBs) running parallel to the substrate. Furthermore, it was shown by the SSRM that the tilt GBs had low resistivity. The two phenomena were explained by our previous proposed GB model [1]. Finally, the grain with a weak EBIC signal was assessed by the transmission electron microscope (TEM), and it was found that the grain had a twin cluster. The edge of the cluster reached at the CdS/CIGS interface, and the interface was disordered, which caused the minority carrier to sink, limiting the solar cell performance. (C) 2011 Elsevier B.V. All rights reserved.

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