☆ 4.4 Article

Effects of RF power and pressure on performance of HF-PECVD silicon thin-film solar cells

THIN SOLID FILMS (2010)

期刊

THIN SOLID FILMS

卷 518, 期 24, 页码 7233-7235

出版社

ELSEVIER SCIENCE SA

DOI: 10.1016/j.tsf.2010.04.083

关键词

Plasma-enhanced chemical vapor deposition; Amorphous silicon films; Thin-film solar cells

类别

Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter

资金

Helius Power Company
National Science Council of the Republic of China [98-2221-E-451-003, 98-2622-E-451-001-cc3]

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Protocol

Reagent

摘要

High-frequency plasma-enhanced chemical vapor deposition (HF-PECVD) is a widely applicable method of deposition over a large area at a high rate for fabricating silicon thin-film solar cells. This investigation presents the properties of hydrogenated amorphous silicon (a-Si:H) films and the preparation of highly-efficient p-i-n solar cells using an RF (27.1 MHz) excitation frequency. The influence of the power (10-40 W) and pressure (20-50 Pa) used during the deposition of absorber layers in p-i-n solar cells on the properties and mechanism of growth of the a-Si:H thin films and the solar cells is studied. The a-Si:H thin films prepared under various deposition conditions have widely varying deposition rates, optical-electronic properties and microstructures. When the deposition parameters were optimized, amorphous silicon-based thin-film silicon solar cells with efficiency of 7.6% were fabricated by HF-PECVD. These results are very encouraging for the future fabrication of highly-efficient thin-film solar cells by HF-PECVD. (C) 2010 Elsevier B.V. All rights reserved.

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