期刊
THIN SOLID FILMS
卷 518, 期 8, 页码 2258-2260出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.10.040
关键词
Unipolar resistive switching; Resistive random access memory; Nickel oxide
The resistive switching properties of NiO-based memory cells were investigated utilizing test structures with a Storage contact size of 150 nm in diameter. Two well defined stable resistance states with high OFF/ON ratios were achieved by unipolar operation. Detailed electrical characterizations with respect to nonvolatile memory applications reveal fast (<300 ns) and reliable switching performance at low operating voltages (<2.5 V). Promising results of endurance data (>1000cycles) and retention tests up to 110 degrees C show excellent stability and indicate the competitive potential with respect to established nonvolatile memory devices. (C) 2009 Elsevier B.V. All rights reserved.
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