The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source–drain structure

标题
The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source–drain structure
作者
关键词
-
出版物
THIN SOLID FILMS
Volume 517, Issue 23, Pages 6349-6352
出版商
Elsevier BV
发表日期
2009-02-17
DOI
10.1016/j.tsf.2009.02.071

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