期刊
THIN SOLID FILMS
卷 517, 期 20, 页码 5805-5807出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.02.145
关键词
Zinc oxide; Growth; Sputtering; Substrate temperature; X-ray diffraction; Photoluminescence; Scanning electron microscopy
ZnO thin films have been deposited on GaN and ZnO substrates at substrate temperatures up to 750 degrees C by radio-frequency sputtering using ZnO ceramic targets in pure argon or in a mixture of argon and oxygen. By optimizing the sputter parameters, such as sputtering power, Ar/O-2 sputtering gas ratio and temperature of the substrates high quality films were obtained as judged from the X-ray rocking curve half width and luminescence line width. The crystallinity of the ZnO films increases with increasing substrate temperature. Yet there are distinct differences between films grown on GaN templates and on O- and Zn-polar ZnO substrates. (C) 2009 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据