Investigation of self-assembled monolayer treatment on SiO2 gate insulator of poly (3-hexylthiophene) thin-film transistors

We have investigated self-assembled monolayer (SAM) treatment on SiO2 gate insulator of poly(3-hexylthiophene) (P3HT) thin-film transistor (TFT), and demonstrated a correlation between mobility and surface free energy of the insulator. The device with lower surface free energy shows higher mobility. The docosyltrichlorosilane (DCTS)-treated device exhibits the best performance among the various SAM-treated devices examined. Field-effect mobility, on/off ratio and threshold voltage of the DCTS-treated P3HT TFT were 0.015 cm(2)/VS, >10(5) and -14 V, respectively. (C) 2009 Elsevier B.V. All rights reserved.