Article
Chemistry, Physical
Ashin Shaji, Karol Vegso, Michaela Sojkova, Martin Hulman, Peter Nadazdy, Yuriy Halahovets, Lenka Pribusova Slusna, Tatiana Vojtekova, Jana Hrda, Matej Jergel, Eva Majkova, Joerg Wiesmann, Peter Siffalovic
Summary: This study provides a comprehensive in-situ investigation of the chemical reactions during the growth of MoS2 thin film using chemical vapor deposition (CVD). The results demonstrate the phase transformations of MoO3 to MoO2 and MoO2 to MoS2, highlighting the importance of understanding these chemical reactions for optimizing the properties of the final 2D TMD films.
APPLIED SURFACE SCIENCE
(2022)
Review
Chemistry, Multidisciplinary
Olivier Thomas, Stephane Labat, Thomas Cornelius, Marie-Ingrid Richard
Summary: X-ray imaging of strains has made impressive progress recently, with improved resolution and optical elements. Development of new detectors has revolutionized measurement strategies. The introduction of a new accelerator ring concept has significantly increased brightness and coherent flux. In the next decade, fast three-dimensional imaging methods will emerge to track the evolution of strains in materials.
Article
Chemistry, Physical
Jannis Thien, Jari Rodewald, Tobias Pohlmann, Kevin Ruwisch, Florian Bertram, Karsten Kuepper, Joachim Wollschlaeger
Summary: This study prepared high-quality CoxFe3-xO4 films with different Co contents using reactive molecular beam epitaxy. The epitaxy, film interfaces, and roughness were extensively investigated using time-resolved X-ray diffraction, low-energy electron diffraction, and X-ray reflectivity measurements. The composition and electronic structure of the films were characterized by hard X-ray photoelectron spectroscopy. The results provide valuable insights into the growth and properties of CoxFe3-xO4 films.
Article
Physics, Applied
Matthias Roessle, Olivier Thomas, Cristian Mocuta, Raphael Rousset, Michael Texier, Stephanie Escoubas, Catherine Dubourdieu, Eudes B. Araujo, Thomas W. Cornelius
Summary: The domain switching dynamics of a polycrystalline thin film made of lanthanum-modified lead zirconate titanate were investigated. The results show that the film has a built-in electric field and exhibits switching behavior comparable to epitaxial thin films.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
G. De Luca, J. Spring, U. Bashir, M. Campanini, R. Totani, C. Dominguez, A. Zakharova, M. Dobeli, T. Greber, M. D. Rossell, C. Piamonteze, M. Gibert
Summary: The study shows that LNMO thin films maintain insulating behavior and a stable Curie temperature, regardless of the epitaxial strain conditions. This suggests that this material could be used in multi-layer device architectures that require a high-temperature ferromagnetic insulating state.
Article
Materials Science, Ceramics
Maurya Sandeep Pradeepkumar, Joysurya Basu, Mohammed Imteyaz Ahmad
Summary: We report the processing of large-grained chalcopyrite-CuIn(S,Se)2 (ch-CISSe) films using spray deposition of wurtzite-CuInS2 (wz-CIS) nanoparticle ink and subsequent selenization. The transformation from wurtzite to chalcopyrite phase and grain growth were studied at different selenization temperatures. It was found that at the suitable selenization temperature and time, the film can completely transform into chalcopyrite phase and the grains can grow.
CERAMICS INTERNATIONAL
(2022)
Article
Chemistry, Physical
Nouredine Oueldna, Alain Portavoce, Maxime Bertoglio, Andrea Campos, Abelkhalek Kammouni, Khalid Hoummada
Summary: This study investigates the phase transitions in Mg-Ag-Sb thin films produced by magnetron sputtering. The results show that using a single alloyed target or co-sputtering three elements cannot produce homogeneous alpha-MgAgSb films. It is also found that the composition of the phases alpha-MgAgSb and gamma-MgAgSb vary during annealing, contrary to previous beliefs.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Nanoscience & Nanotechnology
Nikolaus Weinberger, Tim Kodalle, Tobias Bertram, Rene Gunder, Andreas Saxer, Roman Lackner, Georg N. Strauss, Christian A. Kaufmann
Summary: In this study, Rb, In, and Se were deposited at various substrate temperatures, with RbInSe2 crystal phase detectable at 350 degrees C. Crystallization of monoclinic RbInSe2 was observed at 215 degrees C on the sample grown at the lowest temperature. The morphology of the layers and the preferred crystal orientation of the RISe layer changed with increasing substrate temperature.
SCRIPTA MATERIALIA
(2021)
Article
Chemistry, Physical
J. Chakraborty, T. Oellers, R. Raghavan, A. Ludwig, G. Dehm
Summary: The microstructure evolution and stress development in Cu-Zr alloy thin films were studied using GIXRD and STEM, revealing the generation of dislocations and planar faults with increasing Zr composition, leading to tensile stresses and stress gradients.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Materials Science, Multidisciplinary
Roman G. Burkovsky, Georgiy A. Lityagin, Alexander E. Ganzha, Alexander F. Vakulenko, Ran Gao, Arvind Dasgupta, Bin Xu, Alexey Filimonov, Lane W. Martin
Summary: Research on epitaxial antiferroelectric materials show that PbZrO3/SrRuO3/SrTiO3 heterostructures exhibit an unusual structural response to electric fields lower than the switching threshold, gradually forming a ferroelectric-like structure. The field-induced structure is similar to the parent antiferroelectric phase in octahedral-tilt pattern but differs in lead-ion displacement. The findings suggest a potential mechanism for smearing of polarization-field loops in such heterostructures.
Article
Nanoscience & Nanotechnology
Kyle P. Kelley, Vinit Sharma, Wenrui Zhang, Arthur P. Baddorf, Von B. Nascimento, Rama K. Vasudevan
Summary: The study reveals an unprecedented surface reconstruction in La₁-xSrₓMnO₃, indicating its potential for applications and the ability to tune surface ordering by controlling cation segregation.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Polymer Science
Nobutaka Tanigaki, Chikayo Takechi, Shuichi Nagamatsu, Toshiko Mizokuro, Yuji Yoshida
Summary: The study investigated the structure of a thin film of unsubstituted polythiophene prepared by the friction transfer method, showing highly oriented molecular chains in the plane with a high degree of alignment. The polymer backbones were aligned parallel to the friction direction with a narrow distribution, leading to a higher orientation compared to regioregular poly(3-alkylthiophene)s. Additionally, the GIXD results indicated a preferred orientation where the a-axis is perpendicular to the substrate plane.
Article
Materials Science, Ceramics
Housei Akazawa
Summary: This report introduces a method to evaluate the crystallographic orientation and crystallinity of HAp thin films using Raman scattering spectroscopy. By analyzing the Raman spectra, the presence or absence of certain signals can indicate the orientation of HAp crystals. Another approach involves evaluating crystallinity based on the line width of specific Raman signals.
CERAMICS INTERNATIONAL
(2022)
Article
Nanoscience & Nanotechnology
Vishnu Kumar, Anuradha Bhogra, Manju Bala, Hung-Wei Kuo, Chi-Liang Chen, Chung-Li Dong, Asokan Kandasami, Annapoorni Subramanian
Summary: This study demonstrates the tuning of the optical bandgap of SrTiO3 films by electronic excitations induced by 125 MeV Ag ions. The X-ray diffraction pattern and X-ray absorption spectra (XAS) reveal significant changes in the local electronic structures, particularly in the distortion of TiO6 octahedra and the ratio of area under t(2g)/e(g). These findings provide insights into the role of structural properties and electronic structures in bandgap tuning.
SCRIPTA MATERIALIA
(2021)
Article
Chemistry, Analytical
Wei-Sheng Liu, Balaji Gururajan, Sui-Hua Wu, Li-Cheng Huang, Chung-Kai Chi, Yu-Lun Jiang, Hsing-Chun Kuo
Summary: In this study, aluminum nitride (AlN) thin films were deposited using radio frequency magnetron sputtering, and their properties were characterized. The optimal growth conditions for the AlN thin films were determined, and a gallium nitride (GaN) layer was successfully grown on an AlN thin film as a buffer layer using in situ continual sputtering. This research provides a less expensive method for growing high-quality GaN thin films for various applications.