Article
Chemistry, Physical
Pengkun Li, Xueli Han, Duanyang Chen, Qinglin Sai, Hongji Qi
Summary: This study intentionally introduced V impurities to enhance the n-type conductivity of beta-Ga2O3 crystals, and systematically investigated the effects of air annealing on the structure, electrical, and optical properties of V-doped beta-Ga2O3 single crystals. The results showed improvements in the crystalline quality and surface flatness of beta-Ga2O3 after annealing, as well as changes in carrier concentration, optical transmittance, and phonon spectra. The variations were attributed to the presence of electron traps and the compensation of oxygen vacancies.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Engineering, Electrical & Electronic
Rekha Pilliadugula, N. Gopalakrishnan
Summary: In this study, Sn was doped into the β-Ga2O3 lattice through hydrothermal method at different concentrations, showing enhanced NH3 sensing capabilities in the 2% doped sample. The research also highlighted the sensitivity of the doped samples to humidity and oxygen levels.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Chemistry, Multidisciplinary
Jinshan Wei, Yuzhe Bu, Qinglin Sai, Hongji Qi, Jingbo Li, Huaimin Gu
Summary: In order to improve the n-type conductivity of single-crystal substrates, Sn element was intentionally added into β-Ga2O3 crystals as n-type dopants. However, it was found that the color of β-Ga2O3 crystal changed significantly after high-temperature remelting in the edge-defined film-fed growth (EFG) method. The carrier concentration in the colorless region was lower than that in the blue region, leading to a decrease in electrical conductivity after high-temperature remelting of Sn-doped β-Ga2O3.
Article
Chemistry, Multidisciplinary
Nataliya Vorobyeva, Marina Rumyantseva, Vadim Platonov, Darya Filatova, Artem Chizhov, Artem Marikutsa, Ivan Bozhev, Alexander Gaskov
Summary: This study investigates the impact of tin doping on Gallium(III) oxide for high temperature gas sensors, with a focus on its effect on material conductivity, phase content, microstructure, adsorption sites, and gas sensor properties. The introduction of tin decreases the crystallite size of Ga2O3 and increases the formation temperature of beta-Ga2O3, leading to non-monotonous sensor responses to CO and NH3.
Article
Chemistry, Multidisciplinary
Debabrata Das, Guillermo Gutierrez, C. V. Ramana
Summary: Using Raman scattering analyses, this study investigates the effect of Sn incorporation on the crystal structure, chemical bonding, and phase formation of Ga2O3 compounds. The results show that Sn-induced changes in chemical bonding and phase segregation are significant. The study also reveals the evolution of Sn-O bonds with increasing Sn concentration.
Article
Chemistry, Multidisciplinary
Yi Shen, Hong-Ping Ma, Lin Gu, Jie Zhang, Wei Huang, Jing-Tao Zhu, Qing-Chun Zhang
Summary: In this work, atomic level doping of Sn into Ga2O3 films was achieved using a plasma-enhanced atomic layer deposition method. The study investigated the effects of doping on the chemical state, microstructure, optical properties, energy band alignment, and electrical properties of the films. The results provide valuable insights for the design and application of Ga2O3 film-based transparent devices.
Article
Materials Science, Multidisciplinary
Ming Ying, Junjie Wen, Fan Zhang, Yue Zhao
Summary: CuInS2-xSex (CISSe) thin films were prepared using mixed-source vacuum co-evaporation method and annealed under different conditions. The phase composition and surface morphology of CISSe films were found to be influenced by the annealing conditions and Se content. CuInS1.8Se0.2 film exhibited favorable optical-electrical properties. Carrier transportation in CdS/CuInS1.8Se0.2 NP junction was controlled by recombination mechanism in space charge region, resulting in stable photocurrent and fewer crystal defects and impurity phase.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2022)
Article
Optics
Baizhong Li, Pengkun Li, Lu Zhang, Ruifeng Tian, Qinglin Sai, Mingyan Pan, Bin Wang, Duanyang Chen, Youchen Liu, Changtai Xia, Hongji Qi
Summary: Sb-doped S-Ga2O3 crystals were grown using the OFZ method, and they showed high quality according to X-ray diffraction and rocking curves. Raman spectra indicated Sb substitutions in the octahedral lattice. The carrier concentration, electronic mobility, and electrical resistivity of Sb-doped crystals varied with increasing Sb doping concentration. The S-Ga2O3 crystals had good transmittance in the visible region, but decreased in the infrared region due to the increased carrier concentration. Transmittance in the UV region was high, with a cutoff edge at 258 nm.
CHINESE OPTICS LETTERS
(2023)
Article
Chemistry, Analytical
A. Almaev, V. Nikolaev, N. N. Yakovlev, P. N. Butenko, S. Stepanov, A. Pechnikov, M. P. Scheglov, E. Chernikov
Summary: The gas sensing properties of Pt/α-Ga2O3:Sn/Pt metal-semiconductor-metal (MSM) structures based on epitaxial films of α-Ga2O3 with Pt contacts were investigated. The structures showed high sensitivity to H-2, and it was found that the Pt contacts and Sn doping level played a key role in determining the hydrogen sensing properties. The sensitivity to H-2 was attributed to the modulation of the Schottky barrier height between Pt and α-Ga2O3:Sn.
SENSORS AND ACTUATORS B-CHEMICAL
(2022)
Article
Engineering, Electrical & Electronic
Saurabh Yadav, Amit Kumar Singh, M. K. Roy, Y. S. Katharria
Summary: The optical, structural, and dielectric properties of SnO2-Ga2O3 nanocomposites were studied. The addition of Sn in Ga2O3 significantly influenced the dielectric measurements. The dielectric constant and dielectric loss decreased, while the electrical conductivity increased with increasing Sn content.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Materials Science, Multidisciplinary
Chaitanya Kumar Kunapalli, Deepannita Chakraborty, Kaleemulla Shaik
Summary: This study investigated the effects of vacuum annealing on the structural, optical, and magnetic properties of tin doped zinc sulphide thin films. Vacuum annealing resulted in a cubic structure with finer crystallite size, higher transmittance, and a narrower band gap. Surface defects were confirmed by observation of broad emission photoluminescence peaks, and paramagnetic behavior was observed with reduced maximum magnetization compared to unannealed films.
Article
Chemistry, Physical
Bo Fu, Guangzhong Jian, Wenxiang Mu, Yang Li, Huanyang Wang, Zhitai Jia, Yanbin Li, Shibing Long, Yujun Shi, Xutang Tao
Summary: A high-quality crystalline Sn: beta-Ga2O3 crystal was successfully designed and grown using the innovative EFG method, overcoming growth challenges and studying growth morphology factors, optical properties, and carrier characteristics. Inclusions of iridium with three shapes were observed in bulk beta-Ga2O3 crystal, with corresponding surface barrier height, carrier concentration, and mobility values characterized for the crystal.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Materials Science, Multidisciplinary
Zhe Huang, Siyuan Wu, Baishan Chen, Siwei Tang, Yunzhu Ma, Wensheng Liu
Summary: In this paper, one-step heat treatment was used to eliminate defects in the CZT single crystal, and it was found that the treatment can eliminate some large-size Te inclusions while nano Te precipitates still exist. Additionally, the crystal surface becomes rougher after annealing. The heat treatment also improves the optical and electrical properties of the crystal.
Article
Materials Science, Multidisciplinary
Alessio Bosio, Antonella Parisini, Alessio Lamperti, Carmine Borelli, Laura Fornasini, Matteo Bosi, Ildiko Cora, Zsolt Fogarassy, Bela Pecz, Zsolt Zolnai, Attila Nemeth, Salvatore Vantaggio, Roberto Fornari
Summary: This study successfully achieved n-type doping in ε-Ga2O3 thin films through a post-deposition treatment, using a SnO2 film as the dopant. Good electrical performance was obtained at 600 degrees Celsius, demonstrating an effective doping method.
Article
Chemistry, Physical
Hui Zeng, Meng Wu, Haixia Gao, Yuansheng Wang, Hongfei Xu, Meijuan Cheng, Qiubao Lin
Summary: This paper investigates the influence of iron doping on beta-Ga2O3 material using first-principles calculations. The results show that iron preferentially incorporates into the octahedrally coordinated gallium site and forms V-Ga and O-i defects under oxygen-rich conditions. Furthermore, the complexes FeGaGai and FeGaVGa can significantly enhance the optical absorption in the visible-infrared region of the beta-Ga2O3 material.
