☆ 4.4 Article Proceedings Paper

Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy

THIN SOLID FILMS (2008)

期刊

THIN SOLID FILMS

卷 516, 期 17, 页码 5768-5771

出版社

ELSEVIER SCIENCE SA

DOI: 10.1016/j.tsf.2007.10.045

关键词

beta-Ga2O3; homoepitaxy; molecular beam epitaxy; step-flow growth

类别

Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter

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摘要

beta-Ga2O3 thin films were grown on (100)-oriented beta-Ga2O3 single crystal substrates by plasma-assisted molecular beam epitaxy. At the growth temperature over 800 degrees C and the Ga beam equivalent pressure of 1.1 x 10(-7) Torr, the grown surfaces exhibited clear step and terrace structures and the root-mean-square roughness of 0.5 nm in atomic force microscopy. The successful step-flow growth is indebted to the strong cleavableness of (100) planes of beta-Ga2O3. The off-axis direction, determined by the initial substrate polishing stage, significantly influences on the surface morphology, and it should be along [001] or [00-1] directions in order for smooth surfaces. (C) 2007 Elsevier B.V. All rights reserved.

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