期刊
THIN SOLID FILMS
卷 516, 期 12, 页码 3808-3812出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2007.06.138
关键词
bismuth thin films; pulsed-laser deposition; preferred orientation; roughness; electrical properties
Bismuth thin films were grown by pulsed-laser deposition on glass substrates with the substrate temperature from -40 degrees C to 200 degrees C. The structure of the films was characterized by X-ray diffraction. The surface morphology was studied by atomic force microscopy and X-ray reflectivity. The electrical properties of the films were probed by Hall and van der Pauw measurements. We observed changes in the orientation, grain size and roughness of the bismuth films as a function of the substrate temperature. In particular, at -30 degrees C, the surface roughness was drastically reduced, leading to very smooth bismuth films with highly (111)-preferred orientation. Furthermore, the preferred orientation disappeared at around -40 degrees C. (c) 2007 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据