☆ 4.4 Article Proceedings Paper

Study on the doping effect of Li-doped ZnO film

THIN SOLID FILMS (2008)

期刊

THIN SOLID FILMS

卷 516, 期 16, 页码 5586-5589

出版社

ELSEVIER SCIENCE SA

DOI: 10.1016/j.tsf.2007.07.075

关键词

Li-doped ZnO films; RF magnetron sputtering; structural and electrical properties

类别

Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter

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摘要

Zinc oxide (ZnO) is an excellent piezoelectric material with simple composition. ZnO film is applied to the piezoelectric devices because it has high resistivity and highly oriented direction at c-axis. Structural and electrical properties in ZnO films are influenced by deposition conditions. Lithium-doped ZnO (LZO) films were deposited by RF magnetron sputtering method using Li-doped ZnO ceramic target with various ratios (0 to 10 wt.% LiCl dopant). LZO films revealed high resistivity of above 10(7) Omega cm with smooth surface when they were deposited with 4% LiCl-doped ZnO target under room temperature. However, their c-axis orientation was worse than the c-axis orientation of pure ZnO films. We have also studied on structural, optical and electrical properties of the ZnO films by XRD, AFM, SEM, XPS, and 4-point probe analyses. We concluded that LZO films were deposited with 4 wt.% LiCl-doped ZnO target and were apposite for piezoelectrical application. (c) 2007 Elsevier B.V. All rights reserved.

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