Article
Engineering, Electrical & Electronic
Sosorburam Boldbaatar, V. Janardhanam, Munkhsaikhan Zumuukhorol, Hoon-Ki Lee, Hae-Yong Lee, Hyo Jung Kim, Kyu-Hwan Shim, Chel-Jong Choi
Summary: We investigated Ni Schottky contacts on alpha-Ga2O3 epitaxial layers and studied their current-voltage characteristics at temperatures ranging from 100 to 425 K. The Ni/alpha-Ga2O3 Schottky diode showed excellent rectification with a high barrier height of 1.39 eV, a low leakage current of around 10-12 A, and a breakdown voltage of 215 V at room temperature. The temperature dependence of the barrier height and ideality factor indicated the presence of barrier inhomogeneity at the Schottky interface, with a transition occurring at 250 K.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Engineering, Electrical & Electronic
Slimane Oussalah, Walid Filali, Elyes Garoudja, Boumediene Zatout, Fouaz Lekoui, Rachid Amrani, Noureddine Sengouga, Mohamed Henini
Summary: This study investigates the effect of temperature on the electrical characteristics of Au/Ti on Beryllium-doped Al0.29Ga0.71As Schottky diodes. The analysis of the forward and reverse current-voltage characteristics reveals the dependence of key electronic parameters on temperature, which is attributed to the spatial inhomogeneity at the metal-semiconductor interface. A Gaussian distribution of the barrier heights at the interface successfully explains this inhomogeneity.
MICROELECTRONICS JOURNAL
(2022)
Review
Physics, Applied
Chao Lu, Xueqiang Ji, Zeng Liu, Xu Yan, Nianpeng Lu, Peigang Li, Weihua Tang
Summary: This review summarizes recent research progress on beta-Ga2O3-metal contacts, including related theories, measurements, fabrication processes, and control methods. These studies provide important insights for both theoretical understanding of the metal/semiconductor interface and the fabrication process for engineering applications of Ga2O3-based devices.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Chemistry, Physical
G. Alba, D. Leinen, M. P. Villar, R. Alcantara, J. C. Pinero, A. Fiori, T. Teraji, D. Araujo
Summary: This study analyzed the WC/O-diamond interface annealed at 600K for the first time, revealing the presence of a metastable cubic-WC phase and interface oxygen. The Schottky Barrier Height of the WC/O-diamond contact was estimated at 1.6 +/- 0.2 eV, consistent with I/V measurements.
APPLIED SURFACE SCIENCE
(2021)
Article
Multidisciplinary Sciences
Manuele Bettelli, Silvia Zanettini, Leonardo Abbene, Francesca Casoli, Lucia Nasi, Giovanna Trevisi, Fabio Principato, Antonino Buttacavoli, Andrea Zappettini
Summary: With the rise of the 4th Generation Synchrotron Light Sources and other applications, there is a strong need for direct X-ray detection under high photon flux. The novel Cadmium Zinc Telluride (CZT) developed by Redlen Technologies is considered a reference material for such applications. This study reports a detailed investigation on the characteristics of new optimized sputtered platinum electrical contacts on HF-CZT detectors.
SCIENTIFIC REPORTS
(2023)
Article
Chemistry, Multidisciplinary
Zhenping Wang, Nasir Ali, Tien Dat Ngo, Hoseong Shin, Sungwon Lee, Won Jong Yoo
Summary: High-mobility field-effect transistors (FETs) are achieved by introducing few-layer PdSe2 flakes as channels and directly depositing semimetal antimony (Sb) as drain-source electrodes. The formation of clean and defect-free van der Waals (vdW) stackings at the Sb-PdSe2 heterointerfaces boosts the transport characteristics, while the use of layered h-BN as buffer layers eliminates interfacial disorders and significantly increases electron mobility.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Physical
Wenjun Zhang, Qian Wang, Liang Hu, Jiansheng Wu, Xingqiang Shi
Summary: Through density-functional theory calculations, this study investigates the interlayer interaction between metal and few-layer MoS2, proposing phase-engineering and intercalation doping as methods to improve contact performance, both of which can tune the Schottky barrier height.
JOURNAL OF CHEMICAL PHYSICS
(2021)
Article
Physics, Applied
Lingqin Huang, Sumin Pan, Xuliang Deng, Wenwen Cui
Summary: This paper investigates the effects of MoS2 intercalation on the interface properties of metal/SiC systems using first-principles calculation. The results show that the insertion of MoS2 significantly reduces the Schottky barrier heights of metal/SiC contacts, resulting in the formation of n-type Ohmic contacts. The formation mechanism of Ohmic contacts may be attributed to the saturation of dangling bonds on the SiC surface, the reduction of metal-induced gap states, the formation of an interface dipole layer, and the shift of Fermi level pinning position to the metal/MoS2 interface.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Hetal Patel, Kunjal Patel, Abhishek Patel, Hiren Jagani, K. D. Patel, G. K. Solanki, V. M. Pathak
Summary: Tin selenide (SnSe), a member of the IV-VI group, is used widely in photovoltaic, electronic, and optoelectronic devices due to its layered structure. Single crystals were grown using a direct vapor transport technique and analyzed for purity, surface morphology, and phase using various techniques. The study also reports the preparation of a metal-semiconductor or Schottky junction devices using a layered monochalcogenide single-crystal substrate.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Physical
Liang Sun, Lifeng Zhu, Chunli Zhang, Weiqiu Chen, Zhonglin Wang
Summary: This study utilizes flexoelectricity to control the performance of silicon-based SBDs, finding significant impact on various performance indicators. Current-voltage characteristics of the SBD under different tip forces were measured using C-AFM, confirming the important role of flexoelectricity.
Article
Engineering, Electrical & Electronic
Kadir Ejderha, Abdulmecit Turut
Summary: Ni/n-GaP/Al Schottky diodes were fabricated and annealed at 400 degrees C to achieve optimal performance, resulting in higher barrier heights and lower series resistance compared to the as-deposited diodes. The anomalies in diode parameters were successfully explained by modified thermionic emission current equations based on a Gaussian distribution of temperature-dependent barrier heights.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Physical
Jianqun Geng, Lei Gao, Baijin Li, Hangjing Zhou, Jianchen Lu, Jinming Cai
Summary: In this study, the researchers systematically investigated the contact properties between Cu2Se monolayer and a series of experimentally fabricated 2D metals. They found that H-NbSe2 is the most adaptable electrode for monolayer Cu2Se and discovered the fermi level pinning effects in these metal-semiconductor junctions.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Physical
Hicham Helal, Zineb Benamara, Mouhamed Amine Wederni, Sabrine Mourad, Kamel Khirouni, Guillaume Monier, Christine Robert-Goumet, Abdelaziz Rabehi, Arslane Hatem Kacha, Hicham Bakkali, Lionel C. Gontard, Manuel Dominguez
Summary: Au/0.8 nm-GaN/n-GaAs Schottky diodes show good electrical characteristics, with the disadvantage of nitridation treatment causing an inhomogeneous barrier height.
Article
Nanoscience & Nanotechnology
Hai Yen Le Thi, Muhammad Atif Khan, A. Venkatesan, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Kim
Summary: This study demonstrates the advantage of integrating 1D indium metal contact with MoS2 fully encapsulated within hexagonal boron nitride, showing high-quality electrical performance and analyzing the charge-transport mechanism in detail. The results are promising for using air-sensitive material heterostructures and designing trending flexible, transparent electronic wearable devices at a large scale.
Article
Engineering, Electrical & Electronic
Hasan Efeoglu, Abdulmecit Turut
Summary: This study experimentally investigates the current-voltage-temperature characteristics of different Au/Cu/n-Si Schottky-barrier diodes with varying copper thickness. The results show that the Schottky barrier height increases with decreasing copper thickness, while the average series resistance and ideality factor are almost independent of the thickness. These findings highlight the importance of copper thickness in determining the quality of the diodes.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Materials Science, Multidisciplinary
P. R. Sekhar Reddy, V. Janardhanam, Kyu-Hwan Shim, V. Rajagopal Reddy, Sung-Nam Lee, Se-Jeong Park, Chel-Jong Choi
Article
Chemistry, Physical
V. Rajagopal Reddy, Chel-Jong Choi
JOURNAL OF ALLOYS AND COMPOUNDS
(2020)
Article
Chemistry, Physical
Santosh Kumar, Xiang Zhang, Vinay Kumar Mariswamy, Varra Rajagopal Reddy, Asokan Kandasami, Arun Nimmala, S. V. S. Nageswara Rao, Jue Tang, Seeram Ramakrishnna, Krishnaveni Sannathammegowda
Article
Physics, Condensed Matter
S. Kumar, V. Kumar Mariswamy, A. Kumar, A. Kandasami, A. Nimmala, S. V. S. Nageswara Rao, V. Rajagopal Reddy, K. Sannathammegowda
Article
Materials Science, Multidisciplinary
M. Siva Pratap Reddy, Herie Park, V. Rajagopal Reddy
Summary: The electrical properties of Au/Nd2O3/n-type GaN metal/interlayer/semiconductor (MIS) junctions were investigated over a wide temperature range of 150-400 K. An anomalous decrease in barrier height and increase in ideality factor was observed with decreasing temperature. The anomalies were attributed to barrier inhomogeneities at the MIS junction interface, assuming a double Gaussian distribution of barrier heights in different temperature ranges.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2021)
Article
Engineering, Electrical & Electronic
V. Rajagopal Reddy, C. Venkata Prasad, V Janardhanam, Chel-Jong Choi
Summary: This paper demonstrates the electrical and current transport properties of a Ti/alpha-amylase/p-InP metal/polymer/semiconductor (MPS) junction, showing that the barrier height is influenced by the polymer layer. Results reveal that the forward log (I)-log (V) plot of the junctions display ohmic nature at lower-bias and space-charge-limited conduction at higher-bias, with the leakage current conduction mechanism governed by different mechanisms at different bias regions. The study concludes that the alpha-amylase polymer layer shows potential for use in organic-inorganic devices.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Materials Science, Multidisciplinary
P. R. Sekhar Reddy, V. Janardhanam, V. Rajagopal Reddy, Min Hyuk Park, Chel-Jong Choi
Summary: The study investigates the effects of rapid thermal annealing temperature on CuPc films, revealing changes in structural, morphological, and optical properties with increasing annealing temperature. The electrical properties of Au/CuPc/n-Si (MPS)-type SBDs are influenced by annealing temperature, with carrier transport dominated by different mechanisms at different bias regions. The results suggest that the diffusion of Au atoms into CuPc films induces n-type doping, affecting the barrier height and current transport properties.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2021)
Article
Materials Science, Multidisciplinary
S. Ashajyothi, V. Rajagopal Reddy
Summary: By inserting a SnO2 film on the Au/SnO2/n-InP heterojunction, the barrier height was increased and the interface state density was reduced, resulting in a lower reverse leakage current compared to the Schottky junction. In terms of electron transport, Poole-Frenkel emission dominated in the lower bias region, while the Schottky emission mechanism controlled at higher bias region in both SJ and HJ diodes.
Article
Chemistry, Multidisciplinary
Siva Pratap Reddy Mallem, Peddathimmula Puneetha, Kalupudi Subramanyam, Varra Rajagopal Reddy, Dong-Yeon Lee, Young Lae Kim, Sung Jin An, Kwi-Il Park
Summary: Cubic-structured europium (Eu) doped zinc sulfide (ZnS) nanoparticles were successfully prepared and exhibit red emission due to transition of Eu dopant in the 4f orbital. The doping of Eu also converts diamagnetic ZnS to paramagnetic, and enhances the hydrogen evolution capability of ZnS nanoparticles. These interesting properties may find applications in optoelectronics, spintronics, and hydrogen evolution.
KOREAN JOURNAL OF CHEMICAL ENGINEERING
(2023)
Article
Materials Science, Multidisciplinary
M. Zumuukhorol, Z. Khurelbaatar, Dong-Ho Kim, Kyu-Hwan Shim, V. Janardhanam, V. Rajagopal Reddy, Chel-Jong Choi
Summary: In this study, the researchers demonstrate a high-quality MoS2/i-Ge heterojunction photodetector (PD) and analyze its optoelectrical properties over a broad spectral range, comparing it with the conventional Ge Schottky PD. The MoS2/i-Ge heterojunction PD showed high sensitivity in the wavelength range of 300 nm to 1700 nm, with a responsivity of 0.7 A/W and a quantum efficiency of 56.1%, outperforming the conventional Ge Schottky PD. The heterojunction PD also exhibited superior performance in the visible light range, with a higher responsivity and quantum efficiency than the conventional Ge Schottky PD.
Article
Engineering, Electrical & Electronic
S. Ashajyothi, V. Rajagopal Reddy, Chel-Jong Choi
Summary: This paper investigates the fabrication, structural, chemical, and electrical characteristics of the Ti/WO3/p-InP heterojunction (HJ). The HJ demonstrates lower reverse leakage current and enhanced barrier height compared to the Ti/p-InP Schottky diode (SD). Multiple methods are employed to determine the barrier height and ideality factor, which exhibit consistent results. The HJ also has a lower density of states (N-SS) compared to the SD, indicating the effectiveness of the WO3 insulating layer in reducing N-SS. Both the SD and HJ exhibit Poole-Frenkel emission as the dominant mechanism in the reverse current. These findings suggest the potential of WO3 insulating materials in developing HJ devices.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Materials Science, Multidisciplinary
D. Surya Reddy, V. Janardhanam, V. Rajagopal Reddy, Chel-Jong Choi
Summary: This study investigates the impact of a rare-earth Nd2O3 interlayer on the electrical properties of an Au/n-GaN Schottky junction. The presence of the Nd2O3 layer on the n-GaN surface is confirmed using XRD and TEM techniques. Results show that the Nd2O3 interlayer manipulates the barrier height and leads to a good rectification behavior in the MIS junction compared to the SJ. The capacitance and conductance of the SJ and MIS junction are found to be strongly dependent on frequency, and the Nd2O3 interlayer reduces the interface state density in the MIS junction.
Article
Physics, Multidisciplinary
S. Ashajyothi, V. Rajagopal Reddy
Summary: The current-voltage characteristics of the Au/SnO2/n-InP heterojunction diode were investigated and it was found that increasing temperature leads to inhomogeneous barrier height and interface restructuring. The study also suggested the coexistence of thermionic field emission and field emission mechanisms at low temperatures, with a Gaussian distribution of barrier height and a decrease in interface state density with increasing temperature.
INDIAN JOURNAL OF PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
P. R. Sekhar Reddy, V Janardhanam, Kyu-Hwan Shim, Sung-Nam Lee, A. Ashok Kumar, V. Rajagopal Reddy, Chel Jong Choi
Article
Physics, Multidisciplinary
O. Gullu, M. Cankaya, V. Rajagopal Reddy
INDIAN JOURNAL OF PHYSICS
(2019)
