Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers

标题
Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers
作者
关键词
-
出版物
SOLID-STATE ELECTRONICS
Volume 54, Issue 4, Pages 479-483
出版商
Elsevier BV
发表日期
2010-01-07
DOI
10.1016/j.sse.2009.12.025

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