期刊
SOLID-STATE ELECTRONICS
卷 52, 期 1, 页码 1-6出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2007.07.037
关键词
indium tin oxide; super density are plasma ion plating; O-2 plasma treatment; synchrotron radiation photoemission spectroscopy; work function; organic light emitting diode
Indium tin oxide (ITO) films were deposited on glass by super density arc plasma ion plating (SDAP-IP) method. In X-ray diffraction profiles, no obvious changes were found after O-2 Plasma treatment. The transmittance, roughness, X-ray diffraction pattern, and sheet resistance also negligibly changed with O-2 plasma treatment. However, the water contact angle decreased with the O-2 plasma treatment, Suggesting the increase of cohesive force between SDAP-IP ITO and organic materials. Synchrotron radiation photoemission spectroscopy showed that O-2 plasma treatment resulted in an increase of SDAP-IP ITO work function. Incorporation of oxygen atoms near the SDAP-IP ITO surface during the O-2 plasma treatment induced a peroxidic ITO surface, increasing the work function. (C) 2007 Elsevier Ltd. All rights reserved.
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