Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures

标题
Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 24, Issue 7, Pages 075003
出版商
IOP Publishing
发表日期
2009-05-27
DOI
10.1088/0268-1242/24/7/075003

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