Article
Physics, Applied
Carsten Beckmann, Jens Wieben, Thorsten Zweipfennig, Arno Kirchbruecher, Jasmin Ehrler, Robert Stamm, Zineng Yang, Holger Kalisch, Andrei Vescan
Summary: GaN/Al(x)Ga1-xN heterostructures were grown to study the formation of two-dimensional hole gases (2DHG). The influence of Al mole fraction and GaN channel thickness on the properties of 2DHG was investigated. The experimental results are consistent with theoretical predictions.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Crystallography
Timur Malin, Denis Milakhin, Vladimir Mansurov, Vladimir Vdovin, Anton Kozhukhov, Ivan Loshkarev, Ivan Aleksandrov, Dmitry Protasov, Konstantin Zhuravlev
Summary: A comparative study of GaN layers and 2DEG in AlGaN/GaN heterostructures grown on different substrates revealed that GaN layers grown under the same conditions exhibit similar surface morphology, while compressed GaN layers grown on sapphire substrates have lower dislocation density. Additionally, heterostructures with 2DEG grown on sapphire substrates showed higher electron mobility.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Chemistry, Physical
E. Dobrocka, M. Spankova, M. Sojkova, S. Chromik
Summary: YBCO thin films were grown on (0001) oriented GaN/c-sapphire substrates with epitaxial alignment, and a qualitative texture model was proposed to explain the measured X-ray pole figures. The analysis revealed three texture components parallel to the (0001) plane of the GaN surface, with six orientation variants due to the six-fold symmetry of the GaN surface. It was shown that a thin MgO interlayer deposited on the GaN/c-sapphire substrate before YBCO growth could suppress the formation of undesirable texture components.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Physical
F. Sonmez, E. Arslan, S. Ardali, E. Tiras, E. Ozbay
Summary: The electron mobility limited by different scattering mechanisms in the quaternary AlInGaN alloy grown on a GaN layer is investigated. The dominant scattering mechanisms are the interface roughness scattering and alloy disorder scattering at almost all temperatures. The thickness and alloy composition of the quaternary AlInGaN layer should be optimized for better transport properties.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Nanoscience & Nanotechnology
Eric N. Jin, Brian P. Downey, Vikrant J. Gokhale, Jason A. Roussos, Matthew T. Hardy, Tyler A. Growden, Neeraj Nepal, D. Scott Katzer, Jeffrey P. Calame, David J. Meyer
Summary: The epitaxial integration of high dielectric constant Sr1-xCaxTiO3 films onto AlGaN/GaN/4H-SiC structures has shown promising results in improving electric field management and device breakdown voltage without significant impact on channel transport properties. The films exhibit minimal hysteresis, high dielectric constant, and reduced leakage compared to Schottky contacted samples, indicating their potential for enhancing functionality and performance in high-power RF and power-switching applications.
Article
Materials Science, Multidisciplinary
P. V. Seredin, Dmitry Goloshchapov, Ali Obaid Radam, A. S. Lenshin, N. S. Builov, A. M. Mizerov, I. A. Kasatkin
Summary: This study demonstrates the advantages of using a hybrid compliant substrate, containing a porous silicon layer and a silicon carbide layer, for the growth of high-quality ultra-thin Al?Ga1-xN/GaN heterostructures.
Article
Chemistry, Multidisciplinary
Isabel Streicher, Stefano Leone, Christian Manz, Lutz Kirste, Mario Prescher, Patrick Waltereit, Michael Mikulla, Rudiger Quay, Oliver Ambacher
Summary: In this study, AlScN/GaN heterostructures were grown and characterized to investigate the effect of diffusion of AlGaN on 2DEG confinement. The presence of interlayers and the growth temperature were found to significantly affect the sheet carrier density and electron mobility.
CRYSTAL GROWTH & DESIGN
(2023)
Article
Physics, Applied
Haochen Zhang, Yue Sun, Kang Song, Chong Xing, Lei Yang, Danhao Wang, Huabin Yu, Xueqiang Xiang, Nan Gao, Guangwei Xu, Haiding Sun, Shibing Long
Summary: The study investigates the electrical characteristics of AlGaN/GaN HEMTs on vicinal c-plane sapphire substrates with different misoriented angles, showing enhanced electron mobility and maximum output current as the angle increases. HEMTs on 1.0 degrees and 4.0 degrees substrates exhibit anisotropic electrical behavior with different maximum output currents along different crystallographic directions.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Carsten Beckmann, Zineng Yang, Jens Wieben, Thorsten Zweipfennig, Jasmin Ehrler, Arno Kirchbrucher, Holger Kalisch, Andrei Vescan
Summary: This paper reports on the study of p-channel metal-insulator-semiconductor heterostructure field-effect transistors (MISHFET) based on p-GaN/uid-GaN/Al0.29Ga0.71N single heterostructures. The impact of p-GaN layer removal and channel layer thickness adjustment on the characteristics of the MISHFET is investigated. The results show that the fabricated devices exhibit either depletion-mode or enhancement-mode operation, depending on the remaining GaN thickness.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2023)
Article
Physics, Applied
Zhiwen Liang, Hanghai Du, Ye Yuan, Qi Wang, Junjie Kang, Hong Zhou, Jincheng Zhang, Yue Hao, Xinqiang Wang, Guoyi Zhang
Summary: In this study, an ultra-thin AlGaN/GaN heterostructure field effect transistor (HFET) was fabricated with high breakdown voltage, low on-resistance, and low off-state leakage by using an innovative ex situ sputtered AlN nucleation layer method. This work demonstrates an alternative strategy for fabricating GaN-based power devices with high performance at a low cost.
APPLIED PHYSICS LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Aleksandr Lenshin, Pavel Seredin, Dmitry Goloshchapov, Ali O. Radam, Andrey Mizerov
Summary: For the first time, this study demonstrates the advantages of using a compliant hybrid substrate of porSi/SiC for growing high-quality ultra-thin nanostructured AlxGa1-xN/GaN heterostructures using molecular beam epitaxy. The experimental and computational data obtained in this work are important for understanding the physics and technology of AlxGa1-xN/GaN nanoheterostructures and their potential applications in optoelectronics.
Article
Chemistry, Multidisciplinary
Yuanhao Sun, Fujun Xu, Na Zhang, Jing Lang, Jiaming Wang, Baiyin Liu, Liubing Wang, Nan Xie, Xuzhou Fang, Xiangning Kang, Zhixin Qin, Xuelin Yang, Xinqiang Wang, Weikun Ge, Bo Shen
Summary: By adopting a critical-temperature approach and optimizing growth conditions, AlGaN-based MQWs with an internal quantum efficiency greater than 80% and emission wavelength shorter than 280 nm were successfully grown on nano-patterned sapphire substrates. A deep-ultraviolet light-emitting-diode (DUV-LED) device was fabricated using these high IQE MQWs, achieving a light output power of 17.3 mW at an injection current of 100 mA, demonstrating excellent device performance.
Article
Chemistry, Multidisciplinary
Marianna Spankova, Stefan Chromik, Edmund Dobrocka, Lenka Pribusova Slusna, Marcel Talacko, Maros Gregor, Bela Pecz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo
Summary: In this paper, few-layer MoS2 films were prepared on single-crystal sapphire and heteroepitaxial GaN templates on sapphire substrates using pulsed laser deposition (PLD) technique. The films exhibited epitaxial growth and uniform thickness. The electrical current transport and current injection behavior of the films were studied and showed high n-type doping and rectifying behavior.
Article
Physics, Applied
Eric W. W. Blanton, Timothy A. A. Prusnick, Andrew J. J. Green, Nicholas Glavin, Michael Snure
Summary: Understanding strain effects in AlGaN/GaN devices is crucial for optimizing flexible electronics systems and strain sensors. In this study, the effects of surface potential pinning on the strain-dependent carrier density of AlGaN/GaN structures were investigated. It was found that the surface potential was unpinned for bare surface samples, but more pinned for SiNx and Ni covered samples. Additionally, sub-bandgap light was shown to effectively pin the surface potential. These findings have important implications for tuning strain sensors and minimizing device variability in flexible electronics.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
R. Ramesh, P. Arivazhagan, K. Prabakaran, S. Sanjay, K. Baskar
Summary: AlGaN/GaN heterostructures with different thicknesses of AlN interlayer were grown using MOCVD. The surface roughness decreased with increasing interlayer thickness, and good interfaces were observed between the layers. The presence of AlN interlayer resulted in an increase in mobility from 1246 to 2000 cm(2)/volt-sec at 300K.
MATERIALS CHEMISTRY AND PHYSICS
(2021)
Article
Chemistry, Physical
Ali Barkhordari, Suleyman Ozcelik, Gholamreza Pirgholi-Givi, Hamid Reza Mashayekhi, Semsettin Altindal, Yashar Azizian-Kalandaragh
Summary: A polyvinyl pyrrolidine (PVP) polymer layer doped with barium titanate (BaTiO3) nanostructures was prepared as an interfacial layer for fabricating a metal-semiconductor-metal (MPS) diode. Experimental results showed that the inserted layer significantly increased the dielectric constant of MPS and enhanced the electrical conductivity by reducing interfacial polarization.
Article
Engineering, Electrical & Electronic
Baris Kinaci, Chousein Bairam, Yesim Yalcin, Erman Cokduygulular, Caglar Cetinkaya, Halil Ibrahim Efkere, Suleyman Ozcelik
Summary: This study examined the dielectric properties of titanium doped ZnO thin film and found that its dielectric parameters are highly frequency dependent.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
M. Ulusoy, S. Altindal, Y. Azizian-Kalandaragh, S. Ozcelik, Zeinab Mirzaei-Kalar
Summary: In this research, the electrical response of a structure with biocompatible minerals as an additive was measured, and its convenience in passivating N-ss was examined. The results showed that the additive significantly increased the depletion region and improved the electrical performance. The measurements with different methods had slight variations, but overall indicated that the additive could reduce the fluctuations of N-ss.
MICROELECTRONIC ENGINEERING
(2022)
Article
Energy & Fuels
N. Akcay, V Gremenok, V. A. Ivanov, E. Zaretskaya, S. Ozcelik
Summary: The effect of a thin Al2O3 barrier layer on the performance of CZTS films was investigated. The crystalline qualities of the films did not change significantly with the addition of the Al2O3 layer. Raman spectra and XPS analysis revealed the formation of secondary phases and compounds on the film surfaces. The presence of the Al2O3 layer resulted in changes in surface morphology and Na diffusion rate.
Article
Physics, Multidisciplinary
Sukru Karatas, Semsettin Altindal, Murat Ulusoy, Y. Azizian-Kalandaragh, Suleyman Ozcelik
Summary: This study investigates the electrical properties of Au/(SnS doped PVC)/n-Si structures and obtains some basic electrical parameters through IV data in a wide temperature range. The influence of temperature on barrier height and ideality factor is observed, and an explanation of barrier height inhomogeneity and double Gaussian distribution is proposed.
Article
Multidisciplinary Sciences
Caglar Cetinkaya, Erman Cokduygulular, Baris Kinaci, Feyza Guzelcimen, Yunus Ozen, Nihan Akin Sonmez, Suleyman Ozcelik
Summary: The study finds that integrating a one-dimensional photonic crystal (1D-PC) into CdTe solar cells can improve photovoltaic performance by increasing photon harvesting. The optimal period number allows for sufficient photon harvesting, and the integration of 1D-PC significantly improves the fill factor and power conversion efficiency.
SCIENTIFIC REPORTS
(2022)
Article
Chemistry, Physical
Ali Barkhordari, Semsettin Altindal, Gholamreza Pirgholi-Givi, Hamidreza Mashayekhi, Suleyman Ozcelik, Yashar Azizian-Kalandaragh
Summary: This study investigates the impact of PVC and SnS-doped PVC interfacial layers on the performance of Schottky barrier diodes (SBDs). The results show that these layers can improve the electrical features of the devices and a negative capacitance/dielectric phenomenon is observed at low frequencies.
Article
Chemistry, Multidisciplinary
Yosef Badali, Engin Arslan, Turkan Gamze Ulusoy Ghobadi, Suleyman Ozcelik, Ekmel Ozbay
Summary: The study investigated amorphous gallium oxide thin films as gate dielectrics using plasma-enhanced atomic layer deposition. The films showed smooth surface morphology, amorphous structure, and good dielectric behavior with low trap density.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
(2022)
Article
Physics, Condensed Matter
Gulden Yildiz Senguler, Ece Kutlu Narin, Sefer Bora Lisesivdin, Tulay Serin
Summary: In this study, Cu2CoSnS4 (CCTS) films were grown using the sol-gel method and the effect of thiourea concentration on film properties was investigated. The results showed that increasing thiourea concentration affected the structure, optical, morphological, and electrical properties of the films.
PHYSICA B-CONDENSED MATTER
(2023)
Article
Multidisciplinary Sciences
Caglar Cetinkaya, Erman Cokduygulular, Baris Kinaci, Serkan Emik, Nihan Akin Sonmez, Suleyman Ozcelik
Summary: This study evaluates the performance of semi-transparent organic solar cells and designs structures to optimize optical properties, resulting in enhanced photovoltaic performance.
SCIENTIFIC REPORTS
(2022)
Article
Materials Science, Multidisciplinary
P. Narin, J. M. All Abbas, E. Kutlu-Narin, S. B. Lisesivdin, E. Ozbay
Summary: Monolayer Indium Selenide (ML-InSe) was studied for its 4x4 supercell structure using ab initio calculations. The electronic and optical properties of ML-InSe were calculated for both pristine and substitutionally doped ML-InSe with Pd, Pt, Ag, and Au atoms. Substitutional doping was found to induce a spin-dependent electronic structure in ML-InSe, with flat energy bands near the Fermi level when doping elements were placed in In site. The PDOS calculations revealed the formation of flat bands of d orbitals of some noble metal atoms. The energetically favorable position for doping atoms was determined to be the Pt-In substitution atom based on formation energy calculations. Bond length, static dielectric constant (epsilon(0)), refractive index, and energy band gap were calculated for each studied structure. In the ML-InSe structure with Au-Se, epsilon(0) reached approximately 8.15. Substitutional doping was also found to induce peaks in the lower energy region of the imaginary part of the dielectric function, which may have significance for the optoelectronic properties of ML-InSe.
COMPUTATIONAL MATERIALS SCIENCE
(2023)
Article
Physics, Condensed Matter
Tugce Han, Ece Kutlu-Narin, Polat Narin, Beyza Sarikavak-Lisesivdin, Sefer Bora Lisesivdin
Summary: This study investigates the effect of changing the acetic acid (AA) ratio in the precursor solution on the growth and physical properties of MgZnO structures. The results show that the (0002) diffraction peak is dominant in MgZnO grown with 25% and 50% AA ratio. The surface density of growing MgZnO decreases with an increased AA ratio. The optical properties, including absorbance, transmittance, and band gap, have been examined for MgZnO samples with different AA ratios.
PHYSICA B-CONDENSED MATTER
(2023)
Article
Chemistry, Physical
Neslihan Akcay, Valery F. Gremenok, Yunus Ozen, Konstantin P. Buskis, Ellen P. Zaretskaya, Suleyman Ozcelik
Summary: A two-step process was used to prepare Cu2SnS3 films in this study, and the sulfurization time was found to significantly affect the films' structural, morphological, optical, and electrical characteristics. The films were found to exhibit two structural polymorphs of Cu2SnS3. The fabrication of devices using In2S3/Cu2SnS3 stacks showed slightly enhanced efficiency with annealing.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Materials Science, Multidisciplinary
T. Ataser, N. Akin Sonmez, T. Asar, S. Ozcelik
Summary: Nb2O5 thin films were prepared using sol-gel spin-coated technique and the effects of annealing temperature on surface roughness and optical characteristics were investigated. The results showed that the annealing temperature influenced the optical properties of the films and could be used to tune these characteristics.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
(2022)
Article
Engineering, Multidisciplinary
Ahmet Kursat Bilgili, Omer Akpinar, Suleyman Ozcelik, Mustafa Kemal Ozturk
Summary: In this study, the structural and morphological properties of an InGaN/GaN/Al2O3 structure grown using MOCVD technique were investigated. The crystal size of GaN was determined using XRD, and a calibration coefficient was obtained using Raman spectroscopy. This coefficient, along with the thermoelectric figure ZT, was used to estimate the number of GaN stacks in the structure. The number of stacks and the optical property of absorption coefficient were determined, while the total thickness of the sample was accurately measured using AFM and SEM images. The importance of this study lies in its key role in determining the structural, optical, and morphological features of different samples.
JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI
(2022)