期刊
SCIENCE CHINA-INFORMATION SCIENCES
卷 54, 期 5, 页码 1073-1086出版社
SCIENCE PRESS
DOI: 10.1007/s11432-011-4217-8
关键词
random access memory; storage; oxide; breakdown; oxygen; vacancies
资金
- Ministry of Economic Affairs of Taiwan
Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (automotive, embedded, storage, RAM). Based on sudden conduction through oxide insulators, the characteristics of RRAM technology have still yet to be fully described. In this paper, we present our current understanding of this very promising technology.
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