标题
Indirect doping effects from impurities inMoS2/h-BNheterostructures
作者
关键词
-
出版物
PHYSICAL REVIEW B
Volume 90, Issue 7, Pages -
出版商
American Physical Society (APS)
发表日期
2014-08-29
DOI
10.1103/physrevb.90.075437
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
- (2014) Wenjing Zhang et al. Scientific Reports
- Sulfur vacancies in monolayer MoS2 and its electrical contacts
- (2013) D. Liu et al. APPLIED PHYSICS LETTERS
- Band offsets and heterostructures of two-dimensional semiconductors
- (2013) Jun Kang et al. APPLIED PHYSICS LETTERS
- Tuning the Electronic and Chemical Properties of Monolayer MoS2 Adsorbed on Transition Metal Substrates
- (2013) Wei Chen et al. NANO LETTERS
- Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors
- (2013) Vinod K. Sangwan et al. NANO LETTERS
- Electronic Structural Moiré Pattern Effects on MoS2/MoSe2 2D Heterostructures
- (2013) Jun Kang et al. NANO LETTERS
- Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
- (2013) Kallol Roy et al. Nature Nanotechnology
- Quasiparticle band structures and optical properties of strained monolayer MoS2and WS2
- (2013) Hongliang Shi et al. PHYSICAL REVIEW B
- Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS2
- (2013) C. Rice et al. PHYSICAL REVIEW B
- Electronic structure of boron nitride sheets doped with carbon from first-principles calculations
- (2013) Natalia Berseneva et al. PHYSICAL REVIEW B
- Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles
- (2013) Hannu-Pekka Komsa et al. PHYSICAL REVIEW B
- Origin of then-type andp-type conductivity of MoS2monolayers on a SiO2substrate
- (2013) Kapildeb Dolui et al. PHYSICAL REVIEW B
- Optical Spectrum ofMoS2: Many-Body Effects and Diversity of Exciton States
- (2013) Diana Y. Qiu et al. PHYSICAL REVIEW LETTERS
- Spin-Orbit Splitting in Single-LayerMoS2Revealed by Triply Resonant Raman Scattering
- (2013) Linfeng Sun et al. PHYSICAL REVIEW LETTERS
- Transport Theory of Monolayer Transition-Metal Dichalcogenides through Symmetry
- (2013) Yang Song et al. PHYSICAL REVIEW LETTERS
- Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides
- (2013) Humberto Terrones et al. Scientific Reports
- Breakdown of High-Performance Monolayer MoS2 Transistors
- (2012) Dominik Lembke et al. ACS Nano
- Magnetic states and optical properties of single-layer carbon-doped hexagonal boron nitride
- (2012) Hyoungki Park et al. APPLIED PHYSICS LETTERS
- Analysis of the Heyd-Scuseria-Ernzerhof density functional parameter space
- (2012) Jonathan E. Moussa et al. JOURNAL OF CHEMICAL PHYSICS
- First-Principles Characterization of Potassium Intercalation in Hexagonal 2H-MoS2
- (2012) Amity Andersen et al. Journal of Physical Chemistry C
- MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
- (2012) Hee Sung Lee et al. NANO LETTERS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Two-dimensional crystals-based heterostructures: materials with tailored properties
- (2012) K S Novoselov et al. PHYSICA SCRIPTA
- Phonon-limited mobility inn-type single-layer MoS2from first principles
- (2012) Kristen Kaasbjerg et al. PHYSICAL REVIEW B
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
- (2012) Sunkook Kim et al. Nature Communications
- Low-temperature photocarrier dynamics in monolayer MoS2
- (2011) T. Korn et al. APPLIED PHYSICS LETTERS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Coupling of excitons and defect states in boron-nitride nanostructures
- (2011) C. Attaccalite et al. PHYSICAL REVIEW B
- Phonons in single-layer and few-layer MoS2and WS2
- (2011) A. Molina-Sánchez et al. PHYSICAL REVIEW B
- Emerging Photoluminescence in Monolayer MoS2
- (2010) Andrea Splendiani et al. NANO LETTERS
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy
- (2008) D A Evans et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Restoring the Density-Gradient Expansion for Exchange in Solids and Surfaces
- (2008) John P. Perdew et al. PHYSICAL REVIEW LETTERS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started