标题
Indirect-to-direct gap transition in strained and unstrainedSnxGe1−xalloys
作者
关键词
-
出版物
PHYSICAL REVIEW B
Volume 89, Issue 16, Pages -
出版商
American Physical Society (APS)
发表日期
2014-04-10
DOI
10.1103/physrevb.89.165201
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Achieving direct band gap in germanium through integration of Sn alloying and external strain
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- Heyd-Scuseria-Ernzerhof hybrid functional for calculating the lattice dynamics of semiconductors
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- Prediction that Uniaxial Tension along⟨111⟩Produces a Direct Band Gap in Germanium
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- Restoring the Density-Gradient Expansion for Exchange in Solids and Surfaces
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