T1andT2spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects

标题
T1andT2spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
作者
关键词
-
出版物
PHYSICAL REVIEW B
Volume 81, Issue 7, Pages -
出版商
American Physical Society (APS)
发表日期
2010-02-26
DOI
10.1103/physrevb.81.075214

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